1SS351 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – UHF Detector, Mixer Applications

Ordering number :EN3240B
1SS351
Sillicon Epitaxial Schottky Barrier Diode
UHF Detector, Mixer Applications
Features
· Series connection of 2 elements in a small-sized
package facilitates high-density mounting and
permits 1SS351-applied equipment to be made
smaller.
· Small interterminal capacitance (C=0.69pF typ).
· Small forward voltage (VF=0.23V max).
Package Dimensions
unit:mm
1147A
[1SS351]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IF
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Forward Current
Reverse Current
Interterminal Capacitance
VF
IF=1mA
IF
VF=0.5V
IR
VR=0.5V
C
VR=0.2V, f=1MHz
Note)*:The specifications shown above are for each
individual diode.
· Marking:CH
Electrical Connection
1:Anode
2:Cathode
3:Anode, Cathode
SANYO:CP
Ratings
Unit
5V
30 mA
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min typ max
0.23 V
30
mA
25 µA
0.69
0.9 pF
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/53196GI (KOTO)/D149MO, TS 8-6255 No.3240-1/2