1SS350 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – UHF Detector, Mixer Applications

Ordering number :EN3156A
1SS350
Sillicon Epitaxial Schottky Barrier Diode
UHF Detector, Mixer Applications
Features
· Small interterminal capacitance (C=0.69pF typ).
· Low forward voltage (VF=0.23V max).
· Very small-sized package permitting the 1SS350-
applied sets to be made small and slim.
Package Dimensions
unit:mm
1148A
[1SS350]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IF
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Forward Voltage
Forward Current
Reverse Current
Interterminal Capacitance
· Marking:BH
Electrical Connection
Symbol
Conditions
VF
IF=1mA
IF
VF=0.5V
IR
VR=0.5V
C
VR=0.2V, f=1MHz
(Top view)
1:Anode
2:No contact
3:Cathode
SANYO:CP
Ratings
Unit
5V
30 mA
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min typ max
0.23 V
30
mA
25 µA
0.69
0.9 pF
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/52595GI (KOTO)/D149MO, TS 8-6183 No.3156-1/2