1SS345 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – UHF Detector, Mixer Applications

Ordering number :EN3157B
1SS345
Sillicon Epitaxial Schottky Barrier Diode
UHF Detector, Mixer Applications
Features
· Small interterminal capacitance (C=0.45pF typ).
· Low forward voltage and excellent detection effi-
ciency (VF=0.35V max)
· High breakdown voltage (VR=55V).
· Very small-sized package permitting the 1SS345-
applied sets to be made small and slim.
Package Dimensions
unit:mm
1148A
[1SS345]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Reverse Voltage
Forward Current
Power Dissipation
Junction Temperature
Storage Temperature
Reverse Burning
Symbol
VR
IF
P
Tj
Tstg
Bo
Electrical Characteristics at Ta = 25˚C
(C=25pF)
Conditions
Parameter
Forward Voltage
Forward Current
Reverse Voltage
Reverse Current
Interterminal Capacitance
· Marking:AH
Electrical Connection
Symbol
Conditions
VR
IF=1mA
IF
VF=1V
VR
IR=100µA
IR
VR=40V
C
VR=10V, f=1MHz
1:Anode
2:No connection
3:Cathode
SANYO:CP
Ratings
Unit
55 V
10 mA
150 mW
125 ˚C
–55 to +125 ˚C
2 erg
Ratings
Unit
min typ max
0.35 V
10
mA
55
V
50 µA
0.45
pF
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/53196GI (KOTO)/O259MO, TS 8-5744 No.3157-1/2