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12A02MH-TL-E Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifi er Applications
Ordering number : EN7483A
12A02MH
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
12A02MH Low-Frequency General-Purpose
Amplifier Applications
Applications
• Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit
Features
• Large current capacity
• Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=285mΩ [IC=1A, IB=50mA]
• Small ON-resistance (Ron)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Conditions
When mounted on ceramic substrate (600mm2×0.8mm)
Ratings
Unit
--15
V
--12
V
--5
V
--1
A
--2
A
600 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7019A-004
12A02MH-TL-E
2.0
0.15
3
0 to 0.02
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
AK
1
2
0.65
0.3
TL
Electrical Connection
3
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
1
2
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90512 TKIM/O2203 TSIM TA-100608 No.7483-1/6