08C02SS Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications

Ordering number : EN8513
08C02SS
08C02SS
NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Amplifier Applications
Applications
• _{Low-frequency Amplifer, high-speed switching, DC / DC converter, muting circuit.}
Features
• _{Large current capacitance.}
• _{Low collector-to-emitter saturation voltage (resistance): RCE(sat) typ=240mΩ [IC=1A, IB=50mA].}
• _{Ultrasmall package facilitates miniaturization in end products.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a glass epoxy board (20!30!1.6mm)
Ratings
Unit
15
V
8
V
5
V
0.8
A
1.6
A
200 mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Marking : YT
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=12V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
VCE=2V, IC=50mA
VCB=10V, f=1MHz
IC=30mA, IB=0.6mA
IC=400mA, IB=20mA
IC=400mA, IB=20mA
IC=10µA, IE=0A
IC=1mA, RBE=∞
IE=10µA, IC=0A
Ratings
min
typ
300
440
6
17
110
0.9
15
8
5
max
100
100
800
40
250
1.2
Unit
nA
nA
MHz
pF
mV
mV
V
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90505EA MS IM TA-100372 No.8513-1/4