GCA75BA60 Datasheet, PDF (1/3 Pages) SanRex Corporation – IGBT MODULE

IGBT MODULE
GCA75BA60
SanRex IGBT Module GCA75BA60 is designed for high speed, high current switching
applications. This Module is electrically isolated and contains two IGBTs connected in
series with a fast switching, soft recovery diode (trr=0.1Жs) reverse connected across
each IGBT.
˔ _{ICʹ75A VCESʹ600V}




˔ _{VCEʤsatʥʹ2.4V Typ}
˔ _{t f ʹ0.10Жs Typ}
˔ _{Soft recovery diode}
ʢApplicationsʣ
Inverter for motor control (VVVF)
UPS, AC servo
DC power supply, Welder
$
&
q
u (
y &

&
w
e $
t &
r (
UL;E76102Ê¢MÊ£
."9
ʶ

.EFQUINN


ʶ

ʶ
ʶ
    
5"#Ê¢UÊ£GJU
/".&


1-"5&
Unitɿmm
˙Maximum Ratings
Symbol
Item
VCES
VGES
Ic
ICP
ʵIc
Pc
Tj
Tstg
VISO
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector
Current
DC
Pulseʢ̍msʣ
Reverse Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Isolation VoltageʢR.M.S.ʣ
Mounting
Torque
Mountingʢ̢6ʣ
Terminalʢ̢5ʣ
Mass
ʢTjʹ25ˆ VOMFTT
PUIFSXJTF
TQFDJGJFEÊ£
Conditions
Ratings
Unit
GCA75BA60
with gate terminal shorted to emitter
600
V
with collector shorted to emitter
ʶ20
V
75
A
150
75
A
Tcʹ25ˆ
315
W
150
ˆ
ʵ
UP
Ê´125
ˆ
A.C.̍minute
2500
V
Recommended Value 2.53.9Ê¢2540Ê£
Recommended Value 1.52.5Ê¢1525Ê£
4.7Ê¢48Ê£
2.7Ê¢28Ê£
Nŋm
ʢkgfŋcmʣ
Typical Value
210
g
˙Electrical Characteristics
Symbol
Item
IGES
ICES
VÊ¢BRÊ£CES
VGEʢthʣ
VCEʢsatʣ
Cies
tr
tdʢonʣ
tf
tdʢoffʣ
VECS
trr
Gate Leakage Current
Collector Cut-Off Current
Collector-Emitter Breakdown Voltage
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching
Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Emitter-Collector Voltage
Reverse Recovery Time
Rthʢj-cʣ Thermal Resistance
ʢTjʹ25ˆ VOMFTT
PUIFSXJTF
TQFDJGJFEÊ£
Conditions
Ratings
Unit
Min. Typ. Max.
VGEʹʶ20VɼVCEʹ0V
ʶ500 nA
VCEʹ600VɼVGEʹ0V
1.00 mA
VGEʹ0VɼIcʹ̍mA
600
V
VCEʹ10VɼIcʹ7.5mA
3.0
7.00 V
Icʹ75AɼVGEʹ15V
2.40 2.80 V
VCEʹ10VɼVGEʹ0Vɼfʹ1MHz
4.00 7.50 nF
0.10 0.20
Icʹ75AɼVGEʹʴ15V/ʵ5V
Vccʹ300VɼRGʹ8Њ
0.20 0.40
Жs
0.10 0.20
0.40 0.80
ʵIcʹ75AɼVGEʹ0V
1.80 2.80 V
ʵIcʹ75AɼVGEʹʵ10Vɼdi / dtʹ150A/Жs
0.10 0.15 Жs
IGBT-Case
Diode-Case
0.40
ˆ/W
0.55
1