FCA50CC50 Datasheet, PDF (1/21 Pages) SanRex Corporation – MOSFET MODULE

MOSFET MODULE
FCA50CC50
FCA50CC50 is a dual power MOSFET module designed for fast swiching applications
of high voltage and current.Ê¢2 devices are serial connected with a fast recovery diode
ʢUSSʽ100nsʣreverse connected across each MOSFET.ʣ The mounting base of the
module is electrically isolated from semiconductor elements for simple heatsink
construction.
˔ _{IDʹ50A, VDSSʹ500V}
ɾП
˔ _{Suitable for high speed switching applications.}
˔ _{Low ON resistance.}
˔ _{Wide Safe Operating Areas.}
˔ _{trrʽ100ns fast recovery diode for free wheel.}
UL;E76102Ê¢MÊ£
107.5ʶ
93ʶ
3Ŗ.
1
2
3


TAB110Ê¢5Ê£
ʢApplicationsʣ
UPSÊ¢CVCFÊ£, Motor Control, Switching Power Supply, etc.
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NAME PLATE
UnitɿA
˙Maximum Ratings
ʢTjʹ25ˆ VOMFTT
PUIFSXJTF
TQFDJGJFEÊ£
Symbol
Item
Conditions
Ratings
Unit
FCA50CC50
VDSS Drain-Source Voltage
500
V
VGSS Gate-Source Voltage
ʶ20
V
ID
Drain
IDP
Current
DC
Pulse
Duty 55%
50
A
100
-ID
Source Current
50
A
PT
Total Power Dissipation
Tcʹ25ˆ
330
W
Tj
Channel Temperature
ʵ40 UP
Ê´150
ˆ
Tstg Storage Temperature
ʵ40 UP
Ê´125
ˆ
VISO Isolation VoltageʢR.M.S.ʣ A.C. 1minute
2500
V
Mounting
Torque
MountingʢM6ʣ Recommended Value 2.5-3.9ʢ25-40ʣ
TerminalʢM5ʣ Recommended Value 1.5-2.5ʢ15-25ʣ
4.7Ê¢48Ê£
2.7Ê¢28Ê£
Nŋm
ʢkgfŋBʣ
Mass
Typical Value
240
g
˙Electrical Charactistics
Symbol
Item
IGSS
IDSS
VÊ¢BRÊ£DSS
VGSʢthʣ
RDSʢonʣ
VDSʢonʣ
gfs
Ciss
Coss
Crss
tdʢonʣ
tr
tdʢoffʣ
tf
VSDS
trr
Gate Leakage Current
Zero Gate Voltage Drain Current
Darin-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Switching ^{Rise Time}
Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Rthʢj-cʣ Thermal Resistance
ʢTjʹ25ˆ VOMFTT
PUIFSXJTF
TQFDJGJFEÊ£
Conditions
Ratings
Unit
Min. Typ. Max.
VGSʹʶ20VɼVDSʹ0V
VGSʹ0VɼVDSʹ500V
VGSʹ0VɼIDʹ1mA
VDSʹVGSɼIDʹ10mA
IDʹ25AɼVGSʹ15V
IDʹ25AɼVGSʹ15V
VDSʹ10VɼIDʹ25A
VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz
VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz
VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz
ʶ1.0 ЖA
1.0 mA
500
V
1.0
5.0 V
140 mЊ
3.5 V
30
S
10000 pF
1900 pF
750 pF
60
VDDʹ300VɼVGSʹ15V
IDʹ25AɼRGʹ5Њ
100
ns
520
140
ISʹ25AɼVGSʹ0V
ISʹ25AɼVGSʹʵ5Vɼdi/dtʹ100A/Жs
MOSFET
Diode
2.0 V
80
100 ns
0.38
ˆ/W
1.67
1