DD250GB40 Datasheet, PDF (1/2 Pages) SanRex Corporation – DIOEDE MODULE (F.R.D)

DIODE MODULEÊ¢F.R.D.Ê£
DD250GB
Power Diode Module DD250GB series are designed for various rectifier circuits.
DD250GB has two diode chips connected in series in a package and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 800V is available for various input voltage.
˔ Isolated mounting base
˔ _{Two elements in a package for simpleʢsingle and three phaseʣbridge}
connections
˔ _{Highly reliable glass passivated chips}
˔ _{High surge current capability}
ʢApplicationsʣ
Various rectifiers, Bettery chargers, DC motor drives
UL;E76102Ê¢MÊ£
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Пʢ.ʣ
 
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3
˙Maximum Ratings
Symbol
Symbol
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
̏
DD250GB40
400
480
%%
̎
̍
ʶ
Unitɿᶱ
ʢTjʹ25ˆ unless otherwise specifiedʣ
Ratings
Unit
DD250GB80
800
V
960
V
Symbol
IFÊ¢AVÊ£
IFÊ¢RMSÊ£
IFSM
I²t
Tj
Tstg
VISO
Symbol
Conditions
Average Forward Current
Single phase, half wave, 180ˆconduction, Tcɿ98ˆ
R.M.S. Forward Current
Single phase, half wave, 180ˆconduction, Tcɿ98ˆ
Surge Forward Current
I²t
1_{ʗ2 cycle, 50/60HZ, peak value, non-repetitive}
Value for one cycle of surge current
Operating Junction Temperature
Storage Temperature
Isolation Breakdown VoltageʢR.M.S.ʣ A.C. 1 minute
Mounting
Torque
MountingʢM5ʣ Recommended Value 1.5-2.5ʢ15-25ʣ
TerminalʢM8ʣ Recommended Value 8.8-10 ʢ90-105ʣ
Mass
Typical Value
Ratings
Unit
250
A
390
A
5000/5500
A
125000
A²S
ʵ40 to ʴ150
ˆ
ʵ40 to ʴ125
ˆ
2500
V
2.7Ê¢28Ê£
Nŋm
11ʢ115ʣ ^{ʢᶵfŋBʣ}
510
g
˙Electrical Characteristics
Symbol
Symbol
IRRM Repetitive Peak Reverse Current
VFM Forward Voltage Drop
Rthʢj-cʣ Thermal Impedance
Conditions
Tjʹ150ˆ at VRRM
Tjʹ25ˆ, IFM=750A, Inst. measurement
Junction to case
Ratings
Min. Typ. Max.
50
1.45
0.14
Unit
mA
V
ˆ/W
SanRex®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.[phone] FAX[phone] E-mail: [e-mail]