SKI10195_14 Datasheet, PDF (4/8 Pages) Sanken electric – N ch Trench Power MOSFET

SKI10195
RDS(ON)-ID characteristics (typical)
VGS=10V
45
40
35
30
Tc = 125℃
25
75℃
20
15
25℃
10
5
0
0 10 20 30 40 50 60 70 80 90 100
ID (A)
VDS-VGS characteristics (typical)
Tc=25℃
0.8
0.7
0.6
0.5
0.4
0.3
ID=23.4A
ID=20.4A
0.2
ID=11.7A
0.1
0.0
0
5
10
15
VGS (V)
RDS(ON)-ID characteristics (typical)
VGS=4.5V
50
40
30 ^{Tc = 125℃}
75℃
20
25℃
10
0
0 10 20 30 40 50 60 70 80 90 100
ID (A)
IDR-VSD characteristics (typical)
Tc=25℃
100
90
80
70
60
VGS=10V
50
40
VGS=4.5V
30
3V
20
10
0V
0
0
0.5
1
1.5
VSD (V)
100
90
80
70
60
50
40
30
20
10
0
0
ID-VGS characteristics (typical)
VDS=5V
Tc =125℃
75℃
25℃
1
2
3
4
5
VGS (V)
IDR-VSD characteristics (typical)
VDS=0V
100
90
80
70
60
50
Tc =125℃
40
75℃
30
20
25℃
10
0
0
0.5
1
1.5
VSD (V)
Capacitance-VDS characteristics (typical)
10000
1000
Ciss
Coss
VGS - Qg characteristics (typical)
15
10
Vth-Tc characteristics (typical)
3
2
100
Ta=25℃
VGS=0V
f =1MHz
10
0
10
20
30
VDS (V)
Crss
40
50
RDS(ON)-Tc characteristics (typical)
35
30
25
20
15
10
5
ID=23.4A
VGS=10V
0
25
50
75
100 125 150
Tc (℃)
5
Tc=25℃
VDS=50V
ID=23.4A
0
0
20
40
60
Qg (nC)
RDS(ON)-Tc characteristics (typical)
35
30
25
20
15
10
5
ID=11.7A
VGS=4.5V
0
25
50
75
100 125 150
Tc (℃)
1
ID=1mA
VGS=VDS
0
25
50
75
100 125
150
Tc (℃)
BVDSS-Tc characteristics (typical)
130
125
120
115
110
ID=1mA
VGS=0V
105
100
25
50
75
100 125 150
Tc (℃)
SKI10195-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
4
May. 23, 2014