TF821M Datasheet, PDF (2/2 Pages) Sanken electric – TO-220 8A Thyristor

vT – iT Characteristics (max)
100
50
10
5
1
0.5
0.3
1.0
2.0
3.0
4.0
On-state voltage vT ( V )
IT(AV) – PT(AV) Characteristics
18
50Hz Half-cycle sinewave
θ : Conduction angle
16
14
0° θ 180°
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14
Average on-state current IT(AV) (A)
Pulse trigger temperature
v Characteristics gt (Typical)
30
10
TC=– 40°C
–20°C
25°C
75°C
125°C
vgt
50%
tw
1
TF821M, TF841M, TF861M
ITSM Ratings
140
120
100
Initial junction temperature
Tj=125°C
I TSM
10 ms
1 cycle
80
60
40
1
5 10
50 100
Number of cycle
IT(AV) – Tc Ratings
150
125
100
50Hz Half-cycle sinewave
θ: Conduction angle
0° θ 180°
75
50
25
0
0 2 4 6 8 10 12 14 16
Average on-state current IT(AV) (A)
Pulse trigger temperature
Characteristics igt (Typical)
30
TC=– 40°C
10
– 20°C
25°C
75°C
125°C
igt
50%
tw
1
Gate Characteristics
12
2
10
1
8
0
0
10
20
30
6
Gate trigger current IGT (mA)
4
2 See graph at the upper right
0
0
1
2
3
Gate current iGF (A)
IH temperature Characteristics
(Typical)
26
(RGK=1kΩ)
20
10
0.1
0.5 1
10
10²
10³
10⁴
Pulse width tw (µs)
VGT temperature Characteristics
(Typical)
1.0
(VD=6V, RL=10Ω)
0.8
0.6
0.4
0.2
0
– 40
0 25 50 75 100 125
Junction temperature Tj (°C)
0.1
0.5 1
10
10²
10³
10⁴
Pulse width t w (µs)
IGT temperature Characteristics
(Typical)
14
(VD=6V, RL=10Ω)
12
10
8
6
4
2
0
– 40
0 25 50 75 100 125
Junction temperature Tj (°C)
0
–40
0 25 50 75 100 125
Case temperature Tc (°C)
Transient thermal resistance
Characteristics (Junction to case)
10
1
0.1
1
10
10²
10³
10⁴
t, Time (ms)
15