STD03P Datasheet, PDF (2/8 Pages) Sanken electric – Darlington Transistor with built-in compensation diodes

Darlington Transistor with built-in compensation diodes
STD03P
March, 2006
Electrical characteristics
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Voltage
DC Current Transfer Ratio
Collector-Emitter saturation Voltage
Base-Emitter saturation Voltage
Base-Emitter Voltage
Diode Forward Voltage
Symbol
Test Conditions
ICBO VCB=-160V
MIN.
(Ta= 25°C)
Limits
Unit
TYP. MAX.
-100
μA
IEBO VEB=-5V
-100 μA
VCEO IC=-30mA
-160
V
hFE * VCE=-4V, IC=-10A
5000
20000
VCE(sat) IC=-10A, IB=-10mA
-2.0
V
VBE(sat) IC=-10A, IB=-10mA
-2.5
V
VBE VCE=-20V,IC=-40mA
1200
mV
Di VF IF=2.5mA
1540
mV
* hFE rank: 5000 to 12000(O), 8000 to 20000(Y)
‹ When the transistors are used in pairs, the following conditions must to be satisfied: Total VF of Di ≤ Total
VBE of the transistors.
(The above measurement conditions shall be applied and ΔV=0 to 500mV.)
Sanken Electric Co.,Ltd.
2/8
T01-002EA-060309