STD03N Datasheet, PDF (2/8 Pages) Allegro MicroSystems – Darlington Transistors for Audio Amplifiers

Darlington Transistor with built-in compensation diodes
STD03N
March, 2006
Electrical characteristics
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Voltage
DC Current Transfer Ratio
Collector-Emitter saturation Voltage
Base-Emitter saturation Voltage
Base-Emitter Voltage
Diode Forward Voltage
Symbol
Test Conditions
ICBO VCB=160V
IEBO VEB=5V
VCEO IC=30mA
hFE * VCE=4V, IC=10A
VCE(sat) IC=10A, IB=10mA
VBE(sat) IC=10A, IB=10mA
VBE VCE=20V,IC=40mA
Di VF IF=2.5mA
MIN.
(Ta= 25°C)
Limits
Unit
TYP. MAX.
100
μA
100
μA
160
V
5000
20000
2.0
V
2.5
V
1190
mV
705
mV
* hFE rank: 5000 to 12000(O), 8000 to 20000(Y)
‹ When the transistors are used in pairs, the following conditions must to be satisfied: Total VF of Di ≤ Total
VBE of the transistors.
(The above measurement conditions shall be applied and ΔV=0 to 500mV.)
Sanken Electric Co.,Ltd.
2/8
T01-001EA-060309