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SKI10123 Datasheet, PDF (2/6 Pages) Sanken electric – N ch Trench Power MOSFET
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SKI10123
Thermal Characteristics
 Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA
Test Conditions
Min. Typ. Max. Unit
−
−
0.9 °C/W
−
−
62.5 °C/W
Electrical Characteristics
 Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Breakdown
Voltage
V(BR)DSS
Drain to Source Leakage Current
IDSS
Gate to Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain to Source
On-Resistance
RDS(ON)
Gate Resistance
RG
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge (VGS = 10 V)
Qg1
Total Gate Charge (VGS = 4.5 V)
Qg2
Gate to Source Charge
Qgs
Gate to Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source to Drain Diode Forward
Voltage
VSD
Source to Drain Diode Reverse
Recovery Time
trr
Source to Drain Diode Reverse
Recovery Charge
Qrr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 100 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 1.5 mA
ID = 33.0 A, VGS = 10 V
ID = 16.5 A, VGS = 4.5 V
f = 1 MHz
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDS = 50 V
ID = 33.0 A
VDD = 50 V
ID = 33.0 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
IS = 33.0 A, VGS = 0 V
IF = 33.0 A
di/dt = 100 A/µs
Refer to Figure 3
Min. Typ. Max. Unit
100
−
−
V
−
−
100
µA
−
−
± 100 nA
1.0
2.0
2.5
V
−
8.8
12.1
mΩ
−
9.6
12.9
mΩ
−
0.8
−
Ω
−
6420
−
−
465
−
pF
−
280
−
−
95.6
−
−
45.2
−
nC
−
16.6
−
−
12.4
−
−
10.7
−
−
10.1
−
ns
−
52.8
−
−
21.4
−
−
0.9
1.5
V
−
54.6
−
ns
−
106.6
−
nC
SKI10123-DS Rev.1.2
SANKEN ELECTRIC CO.,LTD.
2
Jan. 24, 2014
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