FMXB-2102 Datasheet, PDF (2/8 Pages) Sanken electric – Fast Recovery Diode with built-in SBD for temperature detection

Fast Recovery Diode with built-in SBD for temperature detection
FMXB-2102
December, 2005
Die Structure: Silicon Planer Diode (FRD, SBD)
§1. Absolute Maximum Ratings and Electrical Characteristics
<FRD part>
•Absolute Maximum Ratings
No.
Parameter
Symbol Unit
1 Transient Peak Reverse Voltage VRSM V
2 Peak Reverse Voltage
VRM V
3 Average Forward Current
IF(AV) A
4 Peak Surge Forward Current
5 I²t Limiting Value
IFSM A
I²t
A²S
6 Junction Temperature
Tj
°C
7 Storage Temperature
Tstg °C
Rating
Conditions
200
200
10
150
10msec. Half sine-wave, one shot
112.5
1msec ≤ t ≤ 10msec
-40 to +150
-40 to+150
• Electrical Characteristics
No.
Parameter
Symbol Unit
1 Forward Voltage Drop
V_F
V
2 Reverse Leakage Current
I_R
µA
Reverse Leakage Current Under
3
High Temperature
H•I_R
mA
4 Reverse Recovery Time
trr1
ns
trr2
ns
5 Thermal Resistance
Rth(j-c) °C/W
Rating
0.98 max.
200 max.
50 max.
30 max
25 max
4.0 max.
Conditions
IF=10A
VR=VRM
VR=VRM, Tj=150°C
IF=IRP=500mA
90% Recovery point
IF=500mA, IRP=1A
75%Recovery point
Between Junction and case
Sanken Electric Co.,Ltd.
2/8
D01-005EA-051215