FMET-24010 Datasheet, PDF (2/6 Pages) Sanken electric – Trench Schottky Diode

FMET-24010
Absolute Maximum Ratings
Unless otherwise specified, T_A = 25 °C
Parameter
Peak Repetitive Reverse Voltage⁽¹⁾
Repetitive Reverse Voltage⁽¹⁾
Average Forward Current⁽²⁾
Surge Forward Current⁽¹⁾
Junction Temperature
Storage Temperature
Symbol
V_RSM
V_RM
I_F(AV)
I_FSM
T_J
T_STG
Rating
100
100
40
150
−40 to 150
−40 to 150
Unit
Remarks
V
V
A
Half cycle sine wave,
A positive side,
10 ms, one shot
°C
°C
Electrical Characteristics
Unless otherwise specified, T_A = 25 °C
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage Drop⁽¹⁾
I_F = 10 A
V_F
I_F = 20 A
— 0.67
—
V
— 0.81 0.85
V
Forward Voltage Drop
Under High Temperature⁽¹⁾
H∙V_F
T_J = 125 °C, I_F = 10 A
T_J = 125 °C, I_F = 20 A
—
—
0.57
0.67
—
—
V
V
Reverse Leakage Current⁽¹⁾
I_R
V_R = V_RM
—
0.9
150
µA
Reverse Leakage Current
Under High Temperature⁽¹⁾
H∙I_R
V_R = V_RM, T_J = 150 °C
—
9.0
75
mA
Thermal Resistance⁽³⁾
R_th(J-C)
—
—
4.0 °C/W
Remarks
(1) _{The rating of one chip.}
(2) _{The rating of two chips. The rating of one chip is 20A.}
(3) _{Rth(J-C) is thermal resistance between junction and case. Case temperature (TC) is measured at the under of the screw}
hole of case.
FMET-24010-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
2
Oct. 28, 2016
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2016