FMEN-420B Datasheet, PDF (2/5 Pages) Sanken electric – Silicon Schottky Barrier Diode

SANKEN ELECTRIC CO., LTD.
4. Absolute maximum ratings
No.
Item
Symbol Unit
1 Transient Peak Reverse Voltage
2 Peak Reverse Voltage
3 Average Forward Current
4 Peak Surge Forward Current
5 I²t Limiting Value
V_RSM
V
V_RM
V
I_F(AV)
A
I_FSM
A
I²t
A²s
6 Junction Temperature
7 Storage Temperature
T_j
°C
T_stg
°C
No.1,2,4&5 show ratings per one chip.
5. Electrical characteristics
No
.
Item
Symbol Unit
1 Forward Voltage Drop
V_F
V
2 Reverse Leakage Current
I_R
µA
3
Reverse Leakage Current Under
High Temperature
H I_R
mA
4 Thermal Resistance
R_th(j-c) °C /W
No.1,2&3 show characteristics per one chip.
Rating
150
150
20
120
72
-40~+150
-40~ 150
Value
0.92 max.
200 max.
50 max.
2.0 max.
FMEN-420B
Conditions
Refer to Derating of 7
Half sinewave, one shot
1msec≤t≤10msec
Conditions
I_F=10A
V_R=V_RM
V_R=V_RM, T_j=150°C
Between Junction and case
091109
2／5
61426-01