FMEN-210A_07 Datasheet, PDF (2/7 Pages) Sanken electric – Schottky Barrier Diode

Schottky Barrier Diode
FMEN-210A
March, 2006
‘ Absolute maximum ratings
No.
Parameter
Symbol Unit
1 Transient Peak Reverse Voltage
V_RSM
V
2 Peak Reverse Voltage
3 Average Forward Current
V_RM
V
I_F(AV)
A
4 Peak Surge Forward Current
5 I²t Limiting Value
I_FSM
A
I²t
A²s
6 Junction Temperature
T_j
°C
7 Storage Temperature
T_stg
°C
No.1,2,4&5 show ratings per one chip.
Rating
100
100
10
100
50
-40 to +150
-40 to +150
Conditions
Half sinewave, one shot
1msec ≤ t ≤ 10msec
‘ Electrical characteristics(Ta=25°C，unless otherwise specified)
No.
Parameter
Symbol Unit
Value
1 Forward Voltage Drop
V_F
V
2 Reverse Leakage Current
I_R
uA
Reverse Leakage Current Under
3
High Temperature
H•I_R
mA
4 Thermal Resistance
R_th(j-c) °C/W
No.1,2,&3 show characteristics per one chip.
0.85 max.
100 max.
50 max.
4.0 max.
Conditions
I_F=5.0A
V_R=V_RM
V_R=V_RM, T_j=150°C
Between Junction and case
Sanken Electric Co.,Ltd.
2/7
D01-090EA-060310