FME-220B Datasheet, PDF (2/7 Pages) Sanken electric – Schottky Barrier Diode

Schottky Barrier Diode
FME-220B
April. 2007
‘ Absolute maximum ratings
No.
Parameter
Symbol Unit
1 Transient Peak Reverse Voltage
2 Peak Reverse Voltage
V_RSM
V
V_RM
V
3 Average Forward Current
I_F(AV)
A
4 Peak Surge Forward Current
5 I²t Limiting Value
I_FSM
A
I²t
A²s
6 Junction Temperature
T_j
°C
7 Storage Temperature
T_stg
°C
No.1, 2, 4 & 5 show ratings per one chip.
Rating
150
150
20
120
72
-40 to +150
-40 to +150
Conditions
Half sinewave, one shot
1msec<t<10msec
‘ Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Parameter
Symbol Unit
Rating
1 Forward Voltage Drop
V_F
V
2 Reverse Leakage Current
I_R
uA
Reverse Leakage Current Under
3
High Temperature
H•I_R
mA
4 Thermal Resistance
R_th(j-c) °C /W
No.1, 2 & 3 show characteristics per one chip.
0.90 max.
200 max.
50 max.
4.0 max.
Conditions
I_F=10A
V_R=V_RM
V_R=V_RM, T_j=150°C
Between Junction and case
Sanken Electric Co., Ltd
D01-013EA-070323