TFD312S Datasheet, PDF (1/2 Pages) Sanken electric – TO-220F 3A Thyristor with built-in Avalanche diode

TO-220F 3A Thyristor with built-in Avalanche diode
TFD312S series
s Features
qWith built-in Avalanche diode
qAverage on-state current: IT(AV)=3A
qGate trigger current: IGT=10mA max
qIsolation voltage: VISO=1500V(50Hz AC, RMS, 1min.)
sAbsolute Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltage
Average on-state current
VDRM
IT (AV)
RMS on-state current
Surge on-state current
Squared rated current and time product
IT (RMS)
ITSM
I²t
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
VFGM
VRGM
PGM
Average gate power loss
Junction temperature
PG (AV)
Tj
Storage temperature
Tstg
Isolation voltage
VISO
VVDRM
Rank
-C
-F
-G
Ratings
20
35
45
Ratings
V
3.0
4.7
60
18
1.5
5.0
5.0
0.5
–10 to +125
–40 to +125
1500
-J
-K
80
100
External Dimensions
(Unit: mm)
10.0^±0.2 φ3.3^±0.2
4.2^±0.2
2.8 C 0.5
a
b
1.35^±0.15
1.35^±0.15
0.85 ^{+– 00..12}
A
G
K
2.54
2.54
2.2^±0.2
(1) (2) (3)
0.45 ^{+–00..12}
2.4^±0.2
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
Unit
V
A
A
A
A² • sec
V
V
W
W
°C
°C
V
Conditions
Tj=–10 to +125°C, RGK=1kΩ
50Hz Half-cycle sinewave, 180°, Continuous current, Tc =92°C
50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
2ms t 10ms
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to case, 1min.
-L
120
-M
145
-N
170
-O
190
sElectrical Characteristics
Parameter
Off-state current
Breakover voltage
Breakover current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Thermal resistance
VVBO
Rank
-C
min
27
Ratings
typ
30
max
33
Symbol
IDRM
VBO
IBO
VTM
VGT
IGT
VGT
IH
dv/dt
Rth
min
0.2
0.2
0.1
-F
-G
50
60
55
65
60
70
Ratings
typ
V
40
max
1.0
100
15
1.4
1.0
10
15
5.0
Unit
mA
µA
V
mA
V
V
mA
V
mA
V/µS
°C/W
(Tj=25°C, unless otherwise specified)
Conditions
Tj=125°C, VD=VDRM, RGK=1kΩ
Tj=25°C, VD=VDRM, RGK=1kΩ
ITM=5A
VD=6V, RL=10Ω
VD=VDRM, Tj=125°C, RGK=1kΩ
RGK=1kΩ, Tj=125°C
VD=VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF
Junction to case
-J
90
100
110
-K
115
125
135
-L
140
150
160
-M
163
175
187
-N
185
200
215
-O
210
225
240
Application example
Input
Reg.
Overvoltage detection
TFD312S
Load
Overcurrent detection
26