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TFC561D Datasheet, PDF (1/1 Pages) Sanken electric – TO-220S Thyristor with built-in reverse diode for HID lamp ignition
TO-220S Thyristor with built-in reverse diode for HID lamp ignition
TFC561D
s Features
qRepetitive peak off-state voltage: VDRM=600V
qRepetitive peak surge on-state current: ITRM=430A
qCritical rate-of-rise of on-state current: di/dt=1200A /µs
qGate trigger current: IGT=20mA max
qWith built-in reverse diode
External Dimensions
(Unit: mm)
10.2±0.3
1.2±0.2
1.27±0.2
0.86 +– 00..21
0.76±0.1
4.44±0.2
1.3±0.2
2.59±0.2
2.54±0.5
2.54±0.5
0.4±0.1
(1) (2) (3)
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
Weight: Approx. 1.5g
sAbsolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Conditions
Repetitive peak off-state voltage
Repetitive surge peak on-state current
VDRM
ITRM
600
430
V
Tj= – 40 to +125°C, RGK=1kΩ
A
VD 430V, 100kcycle, Wp=1.3µs, Ta=125°C V
Critical rate-of-rise of on-state current
di/dt
1200
A/µs
V
Peak forward gate current
IFGM
2.0
A
f 50Hz, duty 10%
Peak gate power loss
PGM
5.0
W
f 50Hz, duty 10%
Average gate power loss
PG (AV)
0.5
W
Peak reverse gate voltage
Diode repetitive peak surge forward current
Junction temperature
VRGM
IFRM
Tj
5
240
– 40 to +125
V
f 50Hz
A
VD 430V, 100kcycle, Wp=1.3µs, Ta=125°C V
°C
Storage temperature
Tstg
– 40 to +125
°C
V The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
Measurement circuit
L
Current waveform (1cycle)
(Ta=25°C)
VD
G1
C
Sample
G2
sElectrical Characteristics
Parameter
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Off-state current (1)
Off-state current (2)
Thermal resistance
Diode forward voltage
Symbol
VTM
VGT
IGT
VGD
IH
IDRM (1)
IDRM (2)
Rth
VF
min
0.1
2
Ratings
typ
max
1.4
1.5
20
10.0
100
1
4.0
1.4
24
2µs/div
Unit
V
V
mA
V
mA
µA
mA
°C/W
V
Conditions
IT=10A
VD=6V, RL=10Ω
VD=6V, RL=10Ω
VD=480V, Tj=125°C
RG–K=1kΩ, Tj=25°C
VD=VDRM, RG–K=1kΩ, Tj=25°C
VD=VDRM, RG–K=1kΩ, Tj=125°C
Junction to case
IF=10A
(Tj=25°C)