STA509A Datasheet, PDF (1/1 Pages) Sanken electric – MOS FET Array

MOS FET Array STA509A
Absolute Maximum Ratings _(Ta=25ºC)
Symbol
Ratings
Unit
VDSS
52±5
V
VGSS
±20
V
ID
±3
A
ID (pulse) *¹
±6
A
4 (Ta = 25ºC)
W
PT
20 (Tc = 25ºC)
W
EAS *²
40
mJ
Tch
150
ºC
Tstg
–55 to +150
ºC
*1 PW 100µs, duty 1%
*2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω
Electrical Characteristics
Symbol
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Test Conditions
ID = 1mA, VGS = 0V
VGS = ±20V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250µA
VDS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A
VGS = 4V, ID = 1.0A
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 1A
VDD 12V
RL = 12Ω
VGS = 5V
RG1 = 50Ω, RG2 = 10Ω
ISD = 6A, VGS = 0V
(Ta=25ºC)
Ratings
Unit
min typ max
47 52
57 V
±1.0 µA
100 µA
1.0
2.5 V
1.0
S
0.2 0.25 Ω
0.25 0.3 Ω
200
pF
120
pF
20
pF
2.0
µs
7.4
µs
3.3
µs
4.2
µs
1.0 1.5 V
s ID — VDS Characteristics
6
5
VGS = 5V
VGS = 10V
4
3
VGS = 4V
s ID — VGS Characteristics
20
10
VDS = 10V
1
External Dimensions STA
25.25^±0.2
b
a
1.0^±0.25
0.5^±0.15
0^±0.3
9 •2.54=22.86^±0.05
(2.54)
C1.5^±0.5
0^±0.3
1 2 3 4 5 6 7 8 9 10
S GD GD GD GDS
a) Type No.
b) Lot No.
(Unit: mm)
s RDS (on) — ID Characteristics
0.8
VGS = 4V
Ta = 150ºC
0.6
75ºC
0.4
25ºC
2
VGS = 3V
1
0
0 2 4 6 8 10 12 14
VDS (V)
0.1
Ta = –55ºC
25ºC
75ºC
150ºC
0.01
0
1
2
3
4
5
6
VGS (V)
–55ºC
0.2
0
0
1
23
4
5
6
ID (A)
s RDS (on) — TC Characteristics
0.5
ID = 1A
0.4
VGS = 4V
typ.
0.3
0.2
VGS = 10V
typ.
0.1
0
–50
0
50
100
150
Tc (ºC)
s Re (yfs) — ID Characteristics
10
VDS = 10V
5
1
0.5
0.2
0.05 0.1
Ta = –55ºC
25ºC
150ºC
0.5 1
6
ID (A)
s IDR — VSD Characteristics
10
8
6
Ta = 150ºC
75ºC
25ºC
4
–55ºC
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (V)
s Safe Operating Area (single pulse)
10
(Tc = 25ºC)
ID (pulse) max
5
(on) ^LIMITED
R ^DS
1m10s0^µs
1
0.5
Equivalent Circuit Diagram
3
5
7
9
2
4
6
8
1
10
0.1
0.5 1
5 10
50
VDS (V)
80