SML70055 Datasheet, PDF (1/1 Pages) Sanken electric – Egg-shaped Bicolor LED (Direct Mount)

SEL70055Series
Egg-shaped Bicolor LED (Direct Mount)
SML70055 Series
External Dimensions
1.0min ^1.5min 20.0min
7.3^±0.5
(0.3)
(Unit: mm)
Directivity (Typical)
B ^0°
30°
A
30°
0°
30°
30°
4.65^±0.2
(2.54)
(2.54)
Reisin burr 0.3max
Reisin heap 0.8max
60°
60°
60°
60°
90°
90°
90°
90°
100%
50
0
50
100%
100%
50
0
50
100%
Transparent
B ^0°
30°
A
30°
0°
30°
30°
Internal wiring
diagram 1
A
B
Tolerance: ±0.3
Internal wiring
diagram 2
A
B
60°
60°
60°
60°
90°
90°
90°
90°
100%
50
0
50
100%
100%
50
0
50
100%
Diffused white
Absolute maximum ratings (Ta=25°C)
Symbol
Unit
Rating
Condition
IF
mA
30
∆IF
mA/°C
−0.45
Above 25°C
IFP
mA
100
f=1kHz, tw≤100µs
VR
V
4
Top
°C
−30 to +85
Tstg
°C −30 to +100
Electrical Optical characteristics (Ta=25°C)
qCommon cathode (Internal wiring diagram 1)
Forward voltage Reverse current Intensity Peak wavelength Spectrum half width
Emitting color ^Part
Number
Lens color
VF
Condition IR Condition IV Condition λP Condition ∆λ Condition Chip
(V)
IF (µA) VR (mcd) IF (nm) IF (nm) IF material
A
Ultra-high-
intensity red
B
Ultra-high-
intensity yellow
SMLU72755C
A Red
SML72755C
B Yellow
A
Ultra-high-
intensity amber
B
Ultra-high-
intensity yellow
SMLU78755C
A Orange
SML79255C
B Red
Clear
Clear
Clear
Clear
typ max (mA) max (V) typ (mA) typ (mA) typ (mA)
2.0 2.5 10 10 4 160 20 635 10 15 10 AIGaInP
2.0 2.5 10 10 4 170 20 572 10 15 10 AIGaInP
1.9 2.5 10 10 4 45 20 630 10 35 10 GaAsP
2.0 2.5 10 10 4 75 20 570 10 30 10 GaP
2.0 2.5 10 10 4 280 20 615 10 15 10 AIGaInP
2.0 2.5 10 10 4 170 20 572 10 15 10 AIGaInP
1.9 2.5 10 10 4 40 20 587 10 33 10 GaAsP
2.0 2.5 10 10 4 45 20 630 10 35 10 GaAsP
A Orange _{SML79455C Clear}
B Green
1.9 2.5 10 10 4 45 20 587 10 33 10 GaAsP
2.0 2.5 10 10 4 75 20 560 10 20 10 GaP
qCommon anode (Internal wiring diagram 2)
Emitting color ^Part
Number
Lens color
A
High-
intensity
red
SML76755WN
Diffused white
B Yellow
Forward voltage Reverse current Intensity Peak wavelength Spectrum half width
VF
Condition IR Condition IV Condition λP Condition ∆λ Condition Chip
(V)
IF (µA) VR (mcd) IF (nm) IF (nm) IF material
typ max (mA) max (V) typ (mA) typ (mA) typ (mA)
1.7 2.2 10 10 4 50 20 660 10 30 10 GaAlAs
2.4 3.0 10 10 4 50 20 570 10 30 10 GaP
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