SMA5114 Datasheet, PDF (1/1 Pages) Sanken electric – N-channel With built-in flywheel diode

SMA5114 N-channel
With built-in flywheel diode
External dimensions _B ^{• • •} SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
Unit
VDSS
60
V
VGSS
±20
V
ID
±3
A
ID(pulse)
±6 (PW≤1ms, Du≤1%)
A
EAS*
6.8
mJ
IAS
3
A
PT
θ j–a
θ j–c
Tch
Tstg
4 (Ta=25°C, with all circuits operating, without heatsink) W
28 ((Tc=25°C,with all circuits operating, with infinite heatsink) W
31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
150
°C
–40 to +150
°C
* : VDD=20V, L=1mH, IL=3A, unclamped, see Fig. E on page 15.
sEquivalent circuit diagram
2 34
9 10 11
1
5
8
12
6
7
Characteristic curves
Electrical characteristics
Symbol
Specification
min
typ
max
Unit
V(BR)DSS
60
V
IGSS
±10
µA
IDSS
100
µA
VTH
1.0
2.5
V
Re(yfs)
1.0
2.3
S
RDS(ON)
0.20
0.25
Ω
0.25
0.30
Ω
Ciss
170
pF
Coss
130
pF
Crss
20
pF
td(on)
80
ns
tr
170
ns
td(off)
330
ns
tf
150
ns
VSD
1.0
1.5
V
trr
80
ns
qDiode for flyback voltage absorption
Specification
Symbol
min
typ
max
Unit
VR
120
V
VF
1.0
1.2
V
IR
10
µA
trr
100
ns
(Ta=25°C)
Conditions
ID=100µA, VGS=0V
VGS=±20V
VDS=60V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=1.0A
VGS=10V, ID=1.0A
VGS=4V, ID=1.0A
VDS=10V,
f=1.0MHz,
VGS=0V
ID=1A,
VDD 30V,
RL=30Ω, VGS=5V,
see Fig. 3 on page 16.
ISD=3A, VGS=0V
ISD=±100mA
Conditions
IR=10µA
IF=1A
VR=120V
IF=±100mA
ID-VDS Characteristics (Typical)
3
10V
3.4V
2
3.2V
ID-VGS Characteristics (Typical)
(VDS=10V)
3
2
RDS(ON)-ID Characteristics (Typical)
0.5
0.4
0.3
VGS=4V
3V
1
VGS=2.8V
25°C
1
10V
0.2
0.1
0
0
2
4
6
8
10
VDS (V)
Re(yfs)-ID Characteristics (Typical)
(VDS=10V)
10
5
TC=–40°C
25°C
1
0.5
125°C
0.2
0.05 0.1
0.5
1
3
ID (A)
IDR-VSD Characteristics (Typical)
3
2
1
0
0
0.5
1.0
1.5
VSD (V)
0
0
1
2
3
4
5
VGS (V)
RDS(ON)-TC Characteristics (Typical)
(ID=1A)
0.5
0.4
V^GS=4V
0.3
10V
0.2
0.1
0
–40
0
50
100
150
TC (°C)
Safe Operating Area (SOA)
10
ID (pulse) max
5
RDS (ON) LIMITED
1
(TC=25°C)
100_µs
10ms
1ms
(1shot)
0.5
0.1
0.05
0.5 1
5 10
VDS (V)
50 100
0
0
1
2
3
ID (A)
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
500
Ciss
100
Coss
50
10
5
Crss
1
0
10
20
30
40
50
VDS (V)
PT-Ta Characteristics
30
With Silicone Grease
25
Natural Cooling
All Circuits Operating
20
15
10
5 Without Heatsink
0
0
50
100
150
Ta (°C)
107