SMA5105 Datasheet, PDF (1/1 Pages) Sanken electric – N-channel With built-in flywheel diode

SMA5105 N-channel
With built-in flywheel diode
External dimensions _B ^{• • •} SMA
Absolute maximum ratings
(Ta=25°C)
Symbol
Ratings
Unit
VDSS
100
V
VGSS
±10
V
ID
±5
A
ID(pulse)
±10 (PW≤1ms)
A
EAS*
32
mJ
IF
5 (PW≤0.5ms, Du≤25%)
A
IFSM
10 (PW≤10ms, Single pulse)
A
VR
120
V
PT ^{4 (Ta=25°C, with all circuits operating, without heatsink) W}
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch
150
°C
Tstg
–40 to +150
°C
* : VDD=20V, L=2mH, ID=5A, unclamped, see Fig. E on page 15.
sEquivalent circuit diagram
234
9 10 11
1
5
8
12
Electrical characteristics
Symbol
Specification
min
typ
max
V(BR)DSS
100
IGSS
±500
IDSS
250
VTH
1.0
2.0
Re(yfs)
3.1
4.5
RDS(ON)
0.27
0.30
0.38
0.41
Ciss
470
Coss
130
ton
70
toff
50
VSD
1.2
2.0
trr
330
Unit
V
nA
µA
V
S
Ω
Ω
pF
pF
ns
ns
V
ns
(Ta=25°C)
Conditions
ID=250µA, VGS=0V
VGS=±10V
VDS=100V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=5A
VGS=10V, ID=2.5A
VGS=4V, ID=2.5A
VDS=25V, f=1.0MHz,
VGS=0V
ID=5A, VDD 50V, VGS=5V,
see Fig. 3 on page 16.
ISD=5A, VGS=0V
ISD=±100mA
qDiode for flyback voltage absorption (1 circuit)
Symbol
Specification
min
typ
max
Unit
Conditions
VR
120
V
IR=10µA
VF
1.0
1.2
V
IF=1A
IR
10
µA
VR=120V
trr
100
ns
IF=±100mA
6
7
Characteristic curves
ID-VDS Characteristics (Typical)
10
10 V
4V
8
6
3.5V
4
3V
2
VGS=2.5V
0
0
2
4
6
8
10
VDS (V)
Re(yfs)-ID Characteristics (Typical)
(VDS=10V)
10
5
104
TC=–40°C
1
25°C
125°C
0.5
0.3
0.05 0.1
0.5 1
5 10
ID (A)
IDR-VSD Characteristics (Typical)
10
8
6
4
10V
2
4V
VGS=0V
0
0
0.5
1.0
1.5
VSD (V)
ID-VGS Characteristics (Typical)
(VDS=10V)
10
8
6
4
TC=–40°C
25°C
2
125°C
0
0
1
2
3
4
5
VGS (V)
RDS(ON)-TC Characteristics (Typical)
(ID=2.5A)
0.6
0.5
0.4
VGS=4V
0.3
VGS=10V
0.2
0.1
0
–40
0
50
100
150
TC (°C)
Safe Operating Area (SOA)
20
ID (pulse) max
10
5
LIMITED
(TC=25°C)
100_µs
10 _ms
1ms
(1shot)
1
0.5
0.1
0.5 1
5 10
VDS (V)
50 100
RDS(ON)-ID Characteristics (Typical)
0.4
0.3
VGS=4V
VGS=10V
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
ID (A)
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
2000
1000
Ciss
500
Coss
100
50
Crss
10
0
10
20
30
40
50
VDS (V)
PT-Ta Characteristics
30
With Silicone Grease
25
Natural Cooling
All Circuits Operating
20
15
10
5 Without Heatsink
0
0
50
100
150
Ta (°C)