SKI04033_14 Datasheet, PDF (1/8 Pages) Sanken electric – N ch Trench Power MOSFET

40 V, 80 A, 3.1 mΩ Low RDS(ON)
N ch Trench Power MOSFET
SKI04033
Features
 V_(BR)DSS --------------------------------- 40 V (I_D = 100 µA)
 I_D ---------------------------------------------------------- 80 A
 R_DS(ON) ----------3.9 mΩ max. (V_GS = 10 V, I_D = 58.5 A)
 Q_g------26.4 nC (V_GS = 4.5 V, V_DS = 20 V, I_D = 58.5 A)
 Low Total Gate Charge
 High Speed Switching
 Low On-Resistance
 Capable of 4.5 V Gate Drive
 100 % UIL Tested
 RoHS Compliant
Package
TO-263
(4)
D
(1) (2) (3)
GDS
Applications
 DC-DC converters
 Synchronous Rectification
 Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
 Unless otherwise specified, T_A = 25 °C
Parameter
Symbol
Test conditions
Rating
Unit
Drain to Source Voltage
V_DS
Gate to Source Voltage
V_GS
40
V
± 20
V
Continuous Drain Current
I_D
T_C = 25 °C
80
A
Pulsed Drain Current
I_DM
PW ≤ 100µs
Duty cycle ≤ 1 %
161
A
Continuous Source Current
(Body Diode)
I_S
80
A
Pulsed Source Current
(Body Diode)
I_SM
PW ≤ 100µs
Duty cycle ≤ 1 %
161
A
V_DD = 20 V, L = 1 mH,
Single Pulse Avalanche Energy
E_AS
I_AS = 11.2 A, unclamped,
R_G = 4.7 Ω,
126
mJ
Refer to Figure 1
Avalanche Current
I_AS
23.3
A
Power Dissipation
P_D
T_C = 25 °C
116
W
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
150
°C
− 55 to 150
°C
SKI04033-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
1
May.23, 2014
http://www.sanken-ele.co.jp