SDH02_01 Datasheet, PDF (1/1 Pages) Sanken electric – NPN Darlington With built-in flywheel diode

SDH02 NPN Darlington
With built-in flywheel diode
External dimensions _E ^{• • •} SD
Absolute maximum ratings
Symbol
Ratings
VCBO
120
VCEO
100
VEBO
6
IC
1.5
ICP
2.5 (PW≤1ms, Du≤10%)
IB
0.2
IF
1.5
IFSM
2.5 (PW≤0.5ms, Du≤10%)
VR
120
PT
3 (Ta=25°C)
Tj
150
Tstg
–40 to +150
sEquivalent circuit diagram
16 15
14 13
12 11
1
3
5
R1 R2
2
4
R1: 2.5kΩ typ R2: 200Ω typ
7
6
(Ta=25°C)
Unit
V
V
V
A
A
A
A
A
V
W
°C
°C
10 9
8
Electrical characteristics
Symbol
Specification
min
typ
max
ICBO
10
IEBO
3
VCEO
100
hFE
2000 6000 12000
VCE(sat)
1.1
1.3
VBE(sat)
1.7
2.2
ton
0.5
tstg
4.5
tf
1.2
fT
50
Cob
20
Unit
µA
mA
V
V
V
µs
µs
µs
MHz
pF
qDiode for flyback voltage absorption
Symbol
Specification
min
typ
max
Unit
VR
120
V
VF
1.6
V
IR
10
µA
trr
100
ns
(Ta=25°C)
Conditions
VCB=120V
VEB=6V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=2mA
VCC 30V,
IC=1A,
IB1=–IB2=2mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
(Ta=25°C)
Conditions
IR=10µA
IF=1A
VR=120V
IF=±100mA
Characteristic curves
IC-VCE Characteristics (Typical)
2.5
IB=10mA
2.0
1.5
4mA
2mA 1.2mA
0.6mA
0.4mA
0.3mA
1.0
0.5
0
1
2
3
4
5
6
VCE (V)
VCE(sat)-IC Temperature Characteristics (Typical)
(IC / IB=1000)
3
hFE-IC Characteristics (Typical)
10000
(VCE=4V)
typ
5000
1000
500
100
0.03 0.05 0.1
0.5
1
2.5
IC (A)
VCE(sat)-IB Characteristics (Typical)
3
198
2
1 25°C
–30°C
Ta=125°C
75°C
0
0.2
0.5
1
2.5
IC (A)
θ j-a-PW Characteristics
50
10
5
1
1
5 10
50 100
500 1000
PW (mS)
2
IC=2A
1
IC=1A
IC=0.5A
0
0.1
0.5 1
5 10
50 100
IB (mA)
PT-Ta Characteristics
3
4
1-1 Chip Operation
3
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
2
2
1
1
0
0
50
100
150
Ta (°C)
hFE-IC Temperature Characteristics (Typical)
10000
(VCE=4V)
5000
1000
T^a=125°7C5^°_{2C5–°3C0°C}
500
100
0.03 0.05 0.1
0.5 1
2.5
IC (A)
IC-VBE Temperature Characteristics (Typical)
(VCE=4V)
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
VBE (V)
Safe Operating Area (SOA)
5
1
0.5
0.1
0.05
Single Pulse
Without Heatsink
0.03 ^Ta=25°C
3
5
10
VCE (V)
50
100