SDC06_01 Datasheet, PDF (1/1 Pages) Sanken electric – NPN With built-in avalanche diode

SDC06 NPN
With built-in avalanche diode
External dimensions _E ^{• • •} SD
Absolute maximum ratings
Symbol
Ratings
VCBO
VCEO
VEBO
IC
ICP
IB
PT
Tj
Tstg
θ j–a
30 to 45
30 to 45
6
2
3 (PW≤1ms, Du≤10%)
30
3 (Ta=25°C)
150
–40 to +150
41.6
sEquivalent circuit diagram
15,16
13,14
11,12
(Ta=25°C)
Unit
V
V
V
A
A
mA
W
°C
°C
°C/W
9,10
Electrical characteristics
Symbol
Specification
min
typ
max
ICBO
10
IEBO
1.2
2.8
VCEO
30
45
hFE
400
700
2000
0.2
VCE(sat)
0.6
VFEC
2.0
ton
1.2
tstg
18.0
tf
3.6
fT
20
Cob
50
ES/B
40
Unit
µA
mA
V
V
V
V
µs
µs
µs
MHz
pF
mJ
(Ta=25°C)
Conditions
VCB=30V
VEB=6V
IC=10mA
VCE=4V, IC=0.5A
IC=0.5A, IB=5mA
IC=1A, IB=5mA
IFEC=1A
VCC 10V,
IC=0.5A,
IB1=5mA, IB2=0A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
L=10mH, Single pulse
1
RB
RBE
2
3
RB
RBE
4
5
RB
RBE
6
RB: 800Ω typ RBE: 2kΩ typ
7
RB
RBE
8
Characteristic curves
IC-VCE Characteristics (Typical)
3
IB=30mA
8mA
5mA
2
3mA
2mA
1
1mA
hFE-IC Characteristics (Typical)
(VCE=4V)
1000
typ
500
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
1000
500
Ta=125°C
75°C
25°C
–30°C
0
0
1
2
3
4
5
6
VCE (V)
VCE(sat)-IC Temperature Characteristics (Typical)
(IC / IB=100)
3
100
0.03 0.05 0.1
0.5 1
3
IC (A)
VCE(sat)-IB Characteristics (Typical)
1
100
0.03 0.05 0.1
0.5 1
3
IC (A)
IC-VBE Temperature Characteristics (Typical)
2
196
1
–30°C
0
0.2
0.5
1
3
IC (A)
θ j-a-PW Characteristics
50
10
5
1
1
5 10
50 100
500 1000
PW (mS)
IC=1A
IC=0.5A
0
1
5
10
30
IB (mA)
PT-Ta Characteristics
3
4
1-1 Chip Operation
3
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
2
2
1
1
0
0
50
100
150
Ta (°C)
Safe Operating Area (SOA)
5
1mS
1
0.5
Single Pulse
Without Heatsink
0.1 ^Ta=25°C
5
10
50
VCE (V)