SDC04 Datasheet, PDF (1/1 Pages) Sanken electric – NPN Darlington With built-in avalanche diode

SDC04 NPN Darlington
With built-in avalanche diode
External dimensions _E ^{• • •} SD
Absolute maximum ratings
Symbol
Ratings
VCBO
VCEO
VEBO
IC
ICP
IB
PT
Tj
Tstg
θ j–a
100±15
100±15
6
1.5
2.5 (PW≤1ms, Du≤10%)
0.1
3 (Ta=25°C)
150
–40 to +150
41.6
sEquivalent circuit diagram
(Ta=25°C)
Unit
V
V
V
A
A
A
W
°C
°C
°C/W
Electrical characteristics
Symbol
Specification
min
typ
max
ICBO
10
IEBO
1
3
VCEO
85
100
115
hFE
2000 5000 12000
VCE(sat)
1.0
1.3
VBE(sat)
1.7
2.2
VFEC
1.2
1.8
ton
0.6
tstg
3.0
tf
1.0
fT
30
Cob
20
Unit
µA
mA
V
V
V
V
µs
µs
µs
MHz
pF
15,16
1
3
R1 R2
2
13,14
5
4
R1: 4kΩ typ R2: 150Ω typ
11,12
7
6
9,10
8
(Ta=25°C)
Conditions
VCB=85V
VEB=6V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=2mA
IFEC=1A
VCC 30V,
IC=1A,
IB1=–IB2=2mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
Characteristic curves
IC-VCE Characteristics (Typical)
2.5
IB=5mA
1mA
2.0
1.5
0.5mA
0.3mA
1.0
0.2mA
0.5
0
0
1
2
3
4
5
6
VCE (V)
VCE(sat)-IC Temperature Characteristics (Typical)
(IC / IB=1000)
2
1
Ta=125°C
75°C
25°C
–30°C
0
0.3
0.5
1
2.5
IC (A)
θ j-a-PW Characteristics
50
10
5
1
1
5 10
50 100
500 1000
PW (mS)
hFE-IC Characteristics (Typical)
20000
(VCE=4V)
10000
typ
5000
1000
500
100
50
0.03 0.05 0.1
0.5
1
2.5
IC (A)
VCE(sat)-IB Characteristics (Typical)
3
2
1
IC-1A
IC=4A
IC=2A
0
0.1
0.5 1
5 10
IB (mA)
50 100
PT-Ta Characteristics
3
4
1-1 Chip Operation
3
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
2
2
1
1
0
0
50
100
150
Ta (°C)
hFE-IC Temperature Characteristics (Typical)
20000
(VCE=4V)
10000
5000
1000
500
T^a=125°_7C5^°_2C5°C
–30^°C
100
50
0.03 0.05 0.1
0.5
1
2.5
IC (A)
IC-VBE Temperature Characteristics (Typical)
(VCE=4V)
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
VBE (V)
Safe Operating Area (SOA)
5
100_µs
1ms
1
10ms
0.5
0.1
0.05
Single Pulse
Without Heatsink
0.03 ^Ta=25°C
3
5
10
VCE (V)
50
100
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