SDC03 Datasheet, PDF (1/1 Pages) Sanken electric – NPN Darlington With built-in avalanche diode

SDC03 NPN Darlington
With built-in avalanche diode
External dimensions _E ^{• • •} SD
Absolute maximum ratings
Symbol
Ratings
VCBO
VCEO
VEBO
IC
ICP
IB
PT
Tj
Tstg
θ j–a
60±10
60±10
6
1.5
2.5 (PW≤1ms, Du≤10%)
0.1
3 (Ta=25°C)
150
–40 to +150
41.6
sEquivalent circuit diagram
(Ta=25°C)
Unit
V
V
V
A
A
A
W
°C
°C
°C/W
Electrical characteristics
Symbol
Specification
min
typ
max
ICBO
10
IEBO
1.1
3.5
VCEO
50
60
70
hFE
2000 5000 12000
VCE(sat)
1.2
1.4
VBE(sat)
1.8
2.2
VFEC
1.3
1.8
ton
0.5
tstg
4.0
tf
1.0
fT
50
Cob
25
Unit
µA
mA
V
V
V
V
µs
µs
µs
MHz
pF
15,16
1
3
R1 R2
2
13,14
5
4
11,12
7
6
9,10
8
R1: 3.5kΩ typ R2: 200Ω typ
(Ta=25°C)
Conditions
VCB=50V
VEB=6V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=2mA
IFEC=1A
VCC 30V,
IC=1A,
IB1=–IB2=2mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
Characteristic curves
IC-VCE Characteristics (Typical)
2.5
IB=10mA
2.0
1.5
0.6mA
0.4mA
0.3mA
1.0
0.5
0
0
1
2
3
4
5
6
VCE (V)
VCE(sat)-IC Temperature Characteristics (Typical)
(IC / IB=1000)
3
Ta=125°C
2
75°C
25°C
–30°C
1
0
0.2
0.5
1
2.5
IC (A)
θ j-a-PW Characteristics
50
10
5
162
1
1
5 10
50 100
500 1000
PW (mS)
hFE-IC Characteristics (Typical)
10000
5000
(VCE=4V)
typ
1000
500
100
50
0.03 0.05 0.1
0.5
1
2.5
IC (A)
VCE(sat)-IB Characteristics (Typical)
3
2
IC=2A
1A
1
0.5A
0
0.1
0.5 1
5 10
IB (mA)
50 100
PT-Ta Characteristics
3
4
1-1 Chip Operation
3
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
2
2
1
1
0
0
50
100
150
Ta (°C)
hFE-IC Temperature Characteristics (Typical)
10000
(VCE=4V)
5000
1000
T^a=125°7C5^°_{2C5–°3C0°C}
500
100
50
0.03 0.05 0.1
0.5
1
2.5
IC (A)
IC-VBE Temperature Characteristics (Typical)
(VCE=4V)
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
VBE (V)
Safe Operating Area (SOA)
5
1
0.5
Single Pulse
0.1 Without Heatsink
Ta=25°C
0.05
3
5
10
VCE (V)
50
100