SAP09P Datasheet, PDF (1/1 Pages) Sanken electric – BUILT-IN TEMPERATURE COMPENSATION DIODES

(Complement to type SAP09N)
SAP09P
Equivalent
circuit
E
D
Emitter resistor
R: 70Ω Typ. ^{RE: 0.22Ω Typ.}
S
B
C
Application: Audio
sAbsolute maximum ratings (Ta=25°C)
Symbol Ratings
Unit
VCBO
150
V
VCEO
–150
V
VEBO
–5
V
IC
–10
A
IB
–1
A
PC
80 ( Tc=25°C) W
Di IF
10
mA
Tj
150
°C
Tstg –40 to +150 °C
sElectrical Characteristics
Symbol
Conditions
ICBO
IEBO
VCEO
hFE ^V
VCE (sat)
VBE (sat)
VBE
Di VF
RE
VCE = –150V
VEB = – 5V
IC = – 30mA
VCE = – 4V, IC = – 6A
IC= – 6A, IB = – 6mA
IC = – 6A, IB = – 6mA
VCE = – 20V, IC = – 40mA
IF = 2.5mA
IE =1A
min
–150
5000
0.176
Ratings
typ
1230
1580
0.22
( Ta = 25°C )
max ^Unit
–100 µA
–100 µA
V
20000
–2.0 V
–2.5 V
mV
mV
0.264 Ω
VhFE Rank O (5000 to 12000), Y (8000 to 20000)
External Dimensions
15.4^±0.3
9.9 ^±0.2
φ 3.2^±0.2
(Unit: mm)
4.5^±0.2
1.6^±0.2
(36°)
a
b
1^±0.1
2.54^±0.1
3.81^±0.1
+0.2
1.35^–0.1
+0.2
0.65 –0.1
+0.2
0.8 –0.1
(7.62)
(12.7)
2.54^±0.1
3.81^±0.1
17.8^±0.3
4^±0.1
ES C DB
+0.2
0.65^–0.1
Weight: Approx 8.3g
a. Part No.
b. Lot No.
IC – VCE Characteristics ( Typical)
–10
–2.0mA
–2.5mA
–8
–6
–1.3mA
–1.0mA
–0.8mA
–1.5mA
–1.8mA _–0.5mA
–0.3mA
–4
IB= –0.2mA
–2
0
0
–2
–4
–6
Collector-Emitter Voltage VCE ( V )
VCE(sat) – IB Characteristics (Typical)
–3
–2
IC= –8A
–6A
–4A
–1
0
–0.3
–1
–5 –10
Base Current IB (mA)
–50 –100
IC – VBE Temperature Characteristics (Typical)
(VCE= –4V)
–10
–8
–6
–4
125°C
25°C
–2
–30°C
0
0
–1
–2
–3
Base-Emitter Voltage VBE (V)
hFE – IC Characteristics ( Typical)
50000
( VCE = –4V )
10000
5000
125°C
25°C
–30°C
1000
500
200
–0.03
–0.1
–0.5 –1
Collector Current IC (A)
–5 –10
j-a – t Characteristics
3
1
0.5
0.1
1
5 10
50 100
Time t (ms)
500 1000 2000
Safe Operating Area (Single Pulse)
–30
–10
–5
D.C1001m0sms
PC – Ta Derating
80
60
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
–0.05
–3
166
–5
–10
–50
–100 –200
Collector-Emitter Voltage VCE ( V )
40
20
Without Heatsink
3.5
0
0
25
50
75
100
125 150
Ambient Temperature Ta (°C)