SAP09N Datasheet, PDF (1/1 Pages) Sanken electric – BUILT-IN TEMPERATURE COMPENSATION DIODES / BUILT-IN EMITTER RESISTOR DARLINGTON

(Complement to type SAP09P)
SAP09N
Equivalent _C
circuit
B
D
R: 70Ω Typ.
S
Emitter resistor
RE: 0.22Ω Typ.
E
Application: Audio
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
150
V
VCEO
150
V
VEBO
5
V
IC
10
A
IB
1
A
PC
80 ( Tc = 25°C) W
Di IF
10
mA
Tj
150
°C
Tstg –40 to +150 °C
sElectrical Characteristics
Symbol
ICBO
IEBO
VCEO
hFE ^V
VCE (sat)
VBE (sat)
VBE
Di VF
RE
Conditions
VCB =150V
VEB = 5V
IC =30mA
VCE =4V, IC=6A
IC =6A, IB =6mA
IC=6A, IB=6mA
VCE =20V, IC= 40mA
IF = 2.5mA
IE =1A
min
150
5000
0.176
Ratings
typ
1220
705
0.22
( Ta = 25°C )
max ^Unit
100 µA
100 µA
V
20000
2.0
V
2.5
V
mV
mV
0.264 Ω
VhFE Rank O (5000 to 12000), Y (8000 to 20000)
External Dimensions
15.4^±0.3
9.9^±0.2
3.2^±0.2
(Unit: mm)
4.5^±0.2
1.6^±0.2
(36°)
a
b
1^±0.1
2.54^±0.1
3.81^±0.1
+0.2
1.35^–0.1
+0.2
0.65 –0.1
+0.2
0.8 –0.1
(7.62)
(12.7)
2.54^±0.1
3.81^±0.1
17.8^±0.3
4^±0.1
BD C SE
+0.2
0.65^–0.1
Weight: Approx 8.3g
a. Part No.
b. Lot No.
IC – VCE Characteristics ( Typical)
10
10mA
2.5mA
2.0mA
8
1.5mA
1.8mA
1.3mA
1.0mA
0.8mA
0.5mA
6
0.3mA
4
IB= 0.2mA
2
0
0
2
4
6
Collector-Emitter Voltage VCE ( V )
VCE(sat) – IB Characteristics (Typical)
3
2
IC = 8A
6A
4A
1
0
0.3 0.5
1
5 10
Base Current IB (mA)
50 100
IC – VBE Temperature Characteristics
10
(VCE =4V)
8
6
4
125°C
25°C
2
– 30°C
0
0
1
2
3
Base-Emitter Voltage VBE (V)
hFE – IC Characteristics ( Typical)
50000
(VCE= 4V )
10000
5000
125°C
25°C
–30°C
1000
500
200
0.03
0.1
0.5 1
Collector Current IC (A)
5 10
j-a – t Characteristics
3
1
0.5
0.1
1
5 10
50 100
Time t (ms)
500 1000 2000
Safe Operating Area (Single Pulse)
30
10
5
D.C100m10sms
PC – Ta Derating
80
60
1
0.5
Without Heatsink
Natural Cooling
0.1
0.05
3
5
10
50
100 200
Collector-Emitter Voltage VCE ( V )
40
20
Without Heatsink
3.5
0
0
25
50
75
100
125 150
Ambient Temperature Ta (°C)
165