RP1H Datasheet, PDF (1/3 Pages) Sanken electric – Ultra-Fast-Recovery Rectifier Diodes

SANKEN ELECTRIC CO., LTD.
１ Scope
The present specifications shall apply to an RP1H.
２ Outline
Type
Silicon Diode
Structure
Resin Molded
Applications
High Frequency Rectification
RP1H
３ Flammability
UL94V-0(Equivalent)
４ Absolute maximum ratings
No.
Item
Symbol Unit
1 Transient Peak Reverse Voltage V_RSM V
2 Peak Reverse Voltage
V_RM
V
3 Average Forward Current
I_F(AV)
A
4 Peak Surge Forward Current
5 I²t Limiting Value
I_FSM
A
I²t
A²s
6 Junction Temperature
T_j
°C
7 Storage Temperature
T_stg
°C
Rating
2000
2000
0.1
5
0.125
-40 to +150
-40 to +150
Conditions
Refer to derating curve
in Section 7
10ms.
Half sine wave, one shot
1ms≦t≦10ms
５ Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Item
Symbol Unit
Rating
1 Forward Voltage Drop
V_F
V
7.0 max.
2 Reverse Leakage Current
I_R
µA
3
Reverse Leakage Current Under
High Temperature
Hï½¥I_R
µA
4 Reverse Recovery Time
trr1
ns
trr2
ns
2.0 max.
10 max.
100 max.
50 max.
5 Thermal Resistance
R_th(j-l) °C/W
15 max.
Conditions
I_F=0.1A
V_R=V_RM
V_R=V_RM, T_j=100°C
I_F=I_RP=100mA
90% Recovery point, T_j=25°C
I_F=100mA, I_RP=200mA
75% Recovery point, T_j=25°C
Between Junction and Lead
050323
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