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RM11A Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES
SANKEN ELECTRIC CO., LTD.
1 Scope
The present specifications shall apply to an RM11A.
2 Outline
Type
Silicon Diode
Structure
Resin Molded
RM11A
Applications
Commercial Frequency Rectification
3 Flammability
UL94V-0 (Equivalent)
4 Absolute maximum ratings
No.
Item
Symbol Unit
Rating
Conditions
1 Transient Peak Reverse Voltage VRSM V
2 Peak Reverse Voltage
VRM
V
3 Average Forward Current
IF(AV)
A
4 Peak Surge Forward Current
5 I2t Limiting Value
IFSM
A
I2t
A2s
6 Junction Temperature
Tj
°C
7 Storage Temperature
Tstg
°C
600
600
1.2
100
50
-40~+150
-40~+150
Refer to derating curve
in Section 6
10ms.
Half sine wave, one shot
1ms≦t≦10ms
5 Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Item
Symbol Unit
Rating
Conditions
1 Forward Voltage Drop
VF
V
2 Reverse Leakage Current
IR
µA
3
Reverse Leakage Current Under
High Temperature
Hï½¥IR
µA
4 Thermal Resistance
Rth(j-l) °C/W
0.92 max.
10 max.
50 max.
15 max.
IF=1.5A
VR=VRM
VR=VRM, Tj=100°C
Between Junction and Lead
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