RG1C Datasheet, PDF (1/4 Pages) Sanken electric – Ultra-Fast-Recovery Rectifier Diodes

SANKEN ELECTRIC CO., LTD.
１ Scope
The present specifications shall apply to an RG1C.
２ Outline
High Frequency Rectification
Type
Silicon Rectifier Diode
Structure
Resin Molded
Applications
High Frequency Rectification, etc.
RG1C
３ Flammability
UL94V-0(Equivalent)
４ Absolute maximum ratings
No.
Item
Symbol Unit
1 Transient Peak Reverse Voltage V_RSM V
2 Peak Reverse Voltage
V_RM
V
3 Average Forward Current
I_F(AV)
A
4 Peak Surge Forward Current
5 I²t Limiting Value
I_FSM
A
I²t
A²s
6 Junction Temperature
7 Storage Temperature
T_j
°C
T_stg
°C
Rating
1000
1000
0.7
10
0.5
-40～+150
-40～+150
Conditions
Refer to derating curve
in Section 7
10ms.
Half sine wave, one shot
1ms≦t≦10ms
５ Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Item
Symbol Unit
Rating
1 Forward Voltage Drop
V_F
V
3.3 max.
2 Reverse Leakage Current
I_R
µA
3
Reverse Leakage Current Under
High Temperature
Hï½¥I_R
mA
4 Reverse Recovery Time
trr1
ns
trr2
ns
20 max.
250 max.
100 max.
50 max.
5 Thermal Resistance
R_th(j-c) °C/W
15 max.
Conditions
I_F=0.7A
V_R=V_RM
V_R=V_RM, T_j=150°C
I_F=I_RP=100mA
90% Recovery point, T_j=25°C
I_F=100mA,I_RP=200mA
75% Recovery point ,T_j=25°C
Between Junction and Lead
030108
1／4
61426-01