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MPE-220A Datasheet, PDF (1/4 Pages) Sanken electric – Silicon Schottky Barrier Diode
SANKEN ELECTRIC CO., LTD.
1. Scope
The present specifications shall apply to an MPE-220A-L.
2. Outline
Type
Silicon Schottky Barrier Diode
Structure
Resin Molded
Applications
High Frequency Rectification, etc.
MPE-220A-L
3. Flammability
UL94V-0(Equivalent)
4. Absolute maximum ratings
No.
Item
Symbol Unit
1 Transient Peak Reverse Voltage VRSM
V
2 Peak Reverse Voltage
VRM
V
3 Average Forward Current
IF(AV)
A
4 Peak Surge Forward Current
5 I2t Limiting Value
IFSM
A
I2t
A2s
6 Junction Temperature
Tj
°C
7 Storage Temperature
Tstg
°C
No.1, 2, 4 and 5 show ratings per one chip.
Rating
100
100
20
120
72
-40 to +150
-40 to +150
Conditions
Refer to derating curve
in Section 7
10ms.
Half sine wave, one shot
1ms≦t≦10ms
5. Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Item
Symbol Unit
Rating
1 Forward Voltage Drop
VF
V
0.85 max.
2 Reverse Leakage Current
IR
µA
3
Reverse Leakage Current Under
High Temperature
Hï½¥IR
mA
4 Thermal Resistance
Rth(j-c) °C/W
No.1, 2, and 3 show characteristics per one chip.
1.0 max.
100 max.
2.5 max.
Conditions
IF=10A
VR=VRM
VR=VRM, Tj=150°C
Between Junction and case
031219
1/4
61426-01