MN638S Datasheet, PDF (1/1 Pages) Sanken electric – Power Transistor

Power Transistor MN638S
Absolute Maximum Ratings _(Ta=25ºC)
Symbol
Ratings
Unit
VCBO
380±50
V
VCEO
380±50
V
VEBO
6
V
IC
6 (pulse 10)
A
IB
1
A
PC
60 (Tc=25ºC)
W
Tj
150
ºC
Tstg
–55 to +150
ºC
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
Test Conditions
VCB=330V
VEB=6V
IC=25mA
VCE=2V, IC=3A
IC=4A, IB=20mA
Ratings
10max
20max
330 to 430
1500min
1.5max
(Ta = 25ºC)
Unit
µA
mA
V
External Dimensions TO220S
10.2^±0.3
4.44^±0.2
1.3^±0.2
V
a
1.6
b
0.1^{+–00..12}
2.54^±0.5
1.27^±0.2
+0.2
0.86 –0.1
1.2^±0.2
2.54^±0.5
0.4^±0.1
a) Part No.
b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.)
10
150mA
120mA
90m6A0mA
20mA
18mA
4mA
2mA
5
IB=1mA
■ VCE (sat) — IB Characteristics (typ.)
3
2
IC = 7A
5A
3A
1
1A
■ IC — VBE Temperature Characteristics (typ.)
10
(VBE =4V)
5
0
0
2
4
6
VCE (V)
0
0.2 0.5 1
5 10
IB (mA)
50 100 200
0
0
1.0
2.0 2.4
VBE (V)
■ hFE — IC Characteristics (typ.)
10000
5000
1000
500
100
50
10
0.02
0.1
0.5 1
IC (A)
(VCE = 2V)
Typ
5 10
■ hFE — IC Temperature Characteristics (typ.)
10000
(VCE = 2V)
5000
125ºC
1000
25ºC
500
–55ºC
100
50
20
0.02
0.1
0.5 1.0
IC (A)
5 10
■ j-c • j-a —t Characteristics
100
10
j-a
j-c
1
0.1
0.001
0.01
0.1
1
10
t (s)
94