MLD685D Datasheet, PDF (1/7 Pages) Sanken electric – Low on-state resistance

SANKEN ELECTRIC
ＭＬＤ６８５Ｄ
http://www.sanken-ele.co.jp
Feb. 2011
Features
z Low on-state resistance
z Built-in gate protection diode
Package
MT100 (TO3P)
Applications
z Electric power steering
z High current switching
Internal Equivalent Circuit
Ｄ(2)
Ｇ(1)
Key Specifications
z V(BR)DSS=60V (ID=100μA)
z RDS(ON)=4.7mΩ Max. (VGS=10V,ID=42A)
ï¼³(3)
Absolute maximum ratings
Characteristic
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
Channel Temperature
Symbol
VDSS
VGSS
ID
ID(pulse) ^※１
PD
EAS ^※2
Tch
Rating
Unit
60
V
±20
V
±85
A
±280
A
150 (Tc=25℃ )
W
280
mJ
-55~150
°C
Storage Temperature
Tstg
-55~150
°C
※1 PW≦100μsec. duty cycle≦1％
※2 VDD=20V, L=1mH, IL=20A, unclamped, See Fig.1
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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