MGD623S Datasheet, PDF (1/10 Pages) Sanken electric – IGBT

IGBT
MGD623S
July, 2009
■Features
• Low Saturation Voltage VCE(sat)=1.8V typ.
• High Speed
tf=120ns typ.
• Low VF FRD Included VF=1.2V typ.
■Applications
• Current Resonance Inverter Switching
• Induction Heating Cooking
■Equivalent circuit
C (2)
G (1)
■Package----TO-3P
E (3)
Absolute maximum ratings
Characteristic
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode pulsed Forward Current
Maximum Power Dissipation
Thermal Resistance IGBT
Thermal Resistance Di
Junction Temperature
Storage Temperature
1) PW≤1ms, Duty cycle≤1%
Symbol
VCES
VGES
IC
IC(pulse) ¹⁾
IF
IF(pulse) ¹⁾
PC
θj-c IGBT
θj-c Di
Tj
Tstg
Rating
(Ta=25°C)
Unit
600
V
±30
V
50
A
100
A
30
A
60
A
150 (Tc=25°C)
W
0.833
°C /W
1.67
°C /W
150
°C
-55 to 150
°C
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
T04-003EA-090721