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GKI07301_15 Datasheet, PDF (1/8 Pages) Sanken electric – N ch Trench Power MOSFET
75 V, 26 A, 17.7 mΩ Low RDS(ON)
N ch Trench Power MOSFET
GKI07301
Features
 V(BR)DSS --------------------------------- 75 V (ID = 100 µA)
 ID ---------------------------------------------------------- 26 A
 RDS(ON) -------- 25.5 mΩ max. (VGS = 10 V, ID = 12.4 A)
 Qg------- 7.1 nC (VGS = 4.5 V, VDS = 38 V, ID = 15.8 A)
 Low Total Gate Charge
 High Speed Switching
 Low On-Resistance
 Capable of 4.5 V Gate Drive
 100 % UIL Tested
 RoHS Compliant
Applications
 DC-DC converters
 Synchronous Rectification
 Power Supplies
Package
DFN 5 × 6
8pin
DDDD
8pin
DDDD
SSSG
1pin
GSSS
1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)
Absolute Maximum Ratings
 Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test conditions
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
VDS
VGS
TC = 25 °C,
ID
with infinite heatsink
TA = 25 °C,
mounted on PCB*
IDM
PW ≤ 100µs
Duty cycle ≤ 1 %
IS
ISM
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 38V, L = 1 mH,
EAS
IAS = 6.8 A, unclamped,
RG = 4.7 Ω,
Refer to Figure 1
IAS
TC = 25 °C,
PD
with infinite heatsink
TA = 25 °C,
mounted on PCB*
TJ
Storage Temperature Range
TSTG
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
S(1)(2)(3)
Rating
75
± 20
26
6
51
26
51
47
13.3
46
3.1
150
− 55 to 150
GKI07301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
Unit
V
V
A
A
A
A
A
mJ
A
W
W
°C
°C
1