FP812 Datasheet, PDF (1/1 Pages) Sanken electric – Power Transistor

Power Transistor FP812
Absolute Maximum Ratings _(Ta=25ºC)
Symbol
Ratings
Unit
VCBO
–120
V
VCEO
–120
V
VEBO
–6
V
IC
–8 (pulse –12)
A
IB
–3
A
PC
35 (Tc=25ºC)
W
Tj
150
ºC
Tstg
–55 to +150
ºC
Electrical Characteristics
Symbol
ICBO
IEBO
VCEO
hFE
VCE (sat)
Test Conditions
VCB = –120V
VEB = –6V
IC = –50mA
VCE = –4V, IC = –3A
IC = –3A, IB = –0.3A
Ratings
10max
10max
–120min
70min
–0.3max
(Ta = 25ºC)
Unit
µA
µA
V
V
Typical Switching Characteristics
VCC RL
(V) (Ω)
12 4
IC VBB1 VBB2 IB1 IB2 ton tstg tf
(A) (V) (V) (mA) (mA) (µs) (µs) (µs)
3 –10 5 –30 30 2.5 0.4 0.6
External Dimensions FM20 (full-mold)
10.0
3.3
4.2
2.8 _C0.5
a
b
1.35
1.35
0.85
2.54
2.54
2.2
2.6
0.45
BCE
a) Type No.
b) Lot No.
(Unit: mm)
s IC — VCE Characteristics (typ.)
–8
–200mA –150mA
–100mA
–75mA
–6
–50mA
–4
–25mA
–2
IB = –10mA
0
0
–1
–2
–3
–4
VCE (V)
s VCE (sat) — IB Characteristics (typ.)
–2
Ic = –3A
Ic = –5A
–1
Ic = –1A
0
–5 –10
–50 –100
–500 –1000 –2000
IB (mA)
s IC — VBE Temperature Characteristics (typ.)
–8
(VBE = –4V)
–6
–4
Tc = –40ºC
–2
25ºC
75ºC
125ºC
0
0
–0.5
–1.0
–1.5
VBE (V)
s hFE — IC Characteristics (typ.)
500
(VCE = –4V)
Typ
100
50
30
–0.01
–0.05 –0.1
–0.5 –1
IC (A)
–5 –8
s hFE — IC Temperature Characteristics (typ.)
500
(VCE = –4V)
Tc = 125ºC
75ºC
25ºC
100
–55ºC
50
30
–0.01
–0.05 –0.1
–0.5 –1
IC (A)
–5 –8
s j-a — t Characteristics
50
10
5
1
0.5
0.1
0.05
0.0002 0.001
NO
Fin
(Ta
= ^25ºC)
Tc = 25ºC
Single Pulese
0.01 0.1
1
t (sec)
10 100
s fT — IE Characteristics (typ.)
30
(VCE = 12V)
Typ
20
10
0
0.01 0.05 0.1
0.5 1
IE (A)
5 10
s Safe Operating Area (single pulse)
–12
–10
–5
D.C _{(Tc = 25ºC)}
–1
–0.5
natural air cooling
Without heatsink
–0.1
–3 –5 –10
–50 –100 –150
VCE (V)
s PC — Ta Derating
40
30
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
20
200 _{•200 •2}
10
100 _{•100 • 2}
Without heatsink
0
0
50
100
Ta (ºC)
150
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