FMX-G12S Datasheet, PDF (1/4 Pages) Sanken electric – Silicon Diode

1. Scope
The present specifications shall apply to an FMX-G12S
FMX-G12S
2. Outline
Type
Silicon Diode
Structure
Resin Molded
Flammability : UL94V-0 (Equivalent)
Applications
High Frequency Rectification
3. Absolute maximum ratings
No.
Item
1 Transient Peak Reverse Voltage
2 Peak Reverse Voltage
3 Average Forward Current
4 Peak Surge Forward Current
5 I²t Limiting Value
6 Junction Temperature
7 Storage Temperature
8 Screwing Torque
9 Dielectric Strength
Symbol Unit
V_RSM
V
V_RM
V
I_{F (AV)}
A
I_FSM
A
I²t
A²s
T_j
°C
T_stg
°C
Nm
kV
Rating
200
200
5.0
65
21
-40 +150
-40 +150
0.59
A.C.1.0
Conditions
Tc=123°C, Sinewave
10msec.
Half sinewave, one shot
Lead and case (1minute)
4. Electrical characteristics (Ta=25°C, unless otherwise specified)
No
Item
Symbol Unit
Value
1 Forward Voltage Drop
V_F
V
0.98 max.
2 Reverse Leakage Current
I_R
uA
100 max.
3
Reverse Leakage Current Under
High Temperature
H I_R
mA
20 max.
4 Reverse Recovery Time
5 Thermal Resistance
trr1
ns
trr2
ns
R_{th (j-c)} °C /W
30 max.
25 max.
4.0 max.
Conditions
I_F=5.0A
V_R=V_RM
V_R=V_RM, T_j=150°C
I_F=I_R=500mA
90% Recovery point, T_j=25°C
I_F=500mA,I_R=1000mA,
75% Recovery point ,T_j=25°C
Between Junction and case
040128
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