FMU-26S Datasheet, PDF (1/4 Pages) Sanken electric – Silicon Diode

SANKEN ELECTRIC CO., LTD.
１ Scope
The present specifications shall apply to FMU-26S/R.
２ Outline
Type
Silicon Diode
Structure
Resin Molded
FMU-26S/R
Applications
High Frequency Rectification
３ Flammability
UL94V-0(Equivalent)
４ Absolute maximum ratings
No.
Item
Symbol Unit
Rating
1 Transient Peak Reverse Voltage V_RSM V
650
2 Peak Reverse Voltage
V_RM
V
600
3 Average Forward Current
I_F(AV)
A
10
4 Peak Surge Forward Current
I_FSM
A
40
5 I²t Limiting Value
I²t
A²s
8.0
6 Junction Temperature
T_j
°C
-40 to +150
7 Storage Temperature
T_stg
°C
No.1, 2, 4 and 5 show ratings per one chip.
-40 to +150
５ Electrical characteristics (Ta=25°C, unless otherwise specified)
No
.
Item
ymbol Unit
Value
1 Forward Voltage Drop
V_F
V
1.5 max.
2 Reverse Leakage Current
I_R
µA
3
Reverse Leakage Current Under
High Temperature
Hï½¥I_R1
Hï½¥I_R2
µA
mA
4 Reverse Recovery Time
trr1 nS
trr2 nS
50 max.
500 max.
3.0 max.
400 max.
180 max.
5 Forward Voltage Drop
R_th(j-c) °C /W
No.1, 2, 3 and 4 show characteristics per one chip.
4.0 max.
Conditions
Refer to derating curve in
Section 7
10ms.
Half sine wave, one shot
1 ms ≤ t ≤ 10 ms
Conditions
I_F=5.0A
V_R=V_RM
V_R=V_RM, T_j=100°C
V_R=V_RM, T_j=150°C
I_F=I_RP=100mA
90% Recovery point, T_j=25°C
I_F=100mA,I_RP=200mA
75% Recovery point ,T_j=25°C
Between Junction and case
110223
1／4
61426-01