FMU-22S Datasheet, PDF (1/4 Pages) Sanken electric – Silicon Diode

SANKEN ELECTRIC CO., LTD.
1. Scope
The present specifications shall apply to FMU-22S/R.
2. Outline
High Frequency Rectification
Type
Silicon Diode
Structure
Resin Molded
Flammability : UL94V-0(Equivalent)
Applications
High Frequency Rectification
FMU-22S/R
3. Absolute maximum ratings
No.
Item
Symbol Unit
1 Transient Peak Reverse Voltage V_RSM V
2 Peak Reverse Voltage
V_RM
V
3 Average Forward Current
I_F(AV)
A
4 Peak Surge Forward Current
5 I²t Limiting Value
I_FSM
A
I²t
A²s
6 Junction Temperature
T_j
°C
7 Storage Temperature
T_stg
°C
No.1, 2, 4 and 5 show ratings per one chip.
4. Electrical characteristics
No.
Item
Symbol Unit
1 Forward Voltage Drop
V_F
V
2 Reverse Leakage Current
I_R
µA
3
Reverse Leakage Current Under
High Temperature
Hï½¥I_R1
Hï½¥I_R2
µA
mA
4 Reverse Recovery Time
trr1
ns
trr2
ns
5 Thermal Resistance
R_th(j-c) °C /W
No.1, 2, 3 and 4 show characteristics per one chip.
Rating
250
200
10
40
8.0
-40 to +150
-40 to +150
Conditions
Refer to derating curve
in Section 6
10ms.
Half sine wave, one shot
1 ms ≤ t ≤ 10 ms
Value
1.5 max.
50 max.
500 max.
3.0 max.
400 max.
180 max.
4.0 max.
Conditions
I_F=5.0A
V_R=V_RM
V_R=V_RM, T_j=100°C
V_R=V_RM, T_j=150°C
I_F=I_RP=100mA
90% Recovery point, T_j=25°C
I_F=100mA,I_RP=200mA
75% Recovery point ,T_j=25°C
Between Junction and case
040825
1／4
61426-01