FMU-12S Datasheet, PDF (1/4 Pages) Sanken electric – Fast-Recovery Rectifier Diodes

SANKEN ELECTRIC CO., LTD.
１ Scope
The present specifications shall apply to an FMU-12S/R.
２ Outline
Type
Silicon Diode
Structure
Resin Molded
Applications
High Frequency Rectification
FMU-12S/R
３ Flammability
UL94V-0(Equivalent)
４ Absolute maximum ratings
No.
Item
Symbol Unit
Rating
Conditions
1 TransientPeak Reverse Voltage V_RSM V
2 Peak Reverse Voltage
V_RM
V
3 Average Forward Current
I_F(AV)
A
4 Peak Surge Forward Current
5 I²t Limiting Value
I_FSM
A
I²t
A²s
250
200
5.0
Refer to derating curve
in Section 7
30
10 ms.
Half sine wave, one shot
4.5
1 ms ≤ t ≤ 10 ms
6 Junction Temperature
T_j
°C
-40 to +150
7 Storage Temperature
T_stg
°C
No.1, 2, 4 and 5 show ratings per one chip.
５ Electrical characteristics (Ta=25°C, unless otherwise specified)
-40 to +150
No.
Item
Symbol Unit
Value
Conditions
1 Forward Voltage Drop
V_F
V
1.5 max.
I_F=2.5A
2 Reverse Leakage Current
I_R
uA
3
Reverse Leakage Current Under
High Temperature
Hï½¥I_R
uA
4 Reverse Recovery Time
t_rr1
ns
t_rr2
ns
5 Thermal Resistance
R_th(j-c) °C /W
No.1, 2, 3 and 4 show characteristics per one chip.
50 max.
500 max.
400 max.
180 max.
4.0 max.
V_R=V_RM
V_R=V_RM, T_j=150°C
I_F=I_RP=100mA
90% Recovery point, T_j=25°C
I_F=100mA，I_RP=200mA
75% Recovery point, T_j=25°C
Between Junction and case
050512
1／4
61426-01