FMJ-2303 Datasheet, PDF (1/4 Pages) Sanken electric – Silicon Schottky Barrier Diode

SANKEN ELECTRIC CO., LTD.
FMJ-2303
１ Scope
The present specifications shall apply to Sanken silicon diode, FMJ-2303.
２ Outline
Type
Silicon Schottky Barrier Diode
Structure
Resin Molded
Flammability : UL94V-0 (Equivalent)
Applications
High Frequency Rectification
３ Absolute maximum ratings
No.
Item
Symbol Unit
Rating
Conditions
1 Transient Peak Reverse Voltage V_RSM V
30
2 Peak Reverse Voltage
3 Average Forward Current
4 Peak Surge Forward Current
5 I²t Limiting Value
V_RM
V
I_F(AV)
A
I_FSM
A
I²t
A²s
30
30
150
112.5
Refer to derating curve
in Section 6
10ms.
Half sine wave, one shot
6 Junction Temperature
T_j
°C
-40 to +150
7 Storage Temperature
T_stg
°C
-40 to +150
8 Dielectric Strength
kV
No.1, 2, 4 and 5 show ratings per one chip.
A.C. 1.0
４ Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Item
Symbol Unit
Rating
Junction to case
(1minute)
Conditions
1 Forward Voltage Drop
V_F
V
2 Reverse Leakage Current
I_R
mA
3
Reverse Leakage Current Under
High Temperature
Hï½¥I_R
mA
4 Thermal Resistance
R_th(j-c) °C/W
No.1, 2, and 3 show characteristics per one chip.
0.48 max.
15 max.
500 max.
4.0 max.
I_F=15A
V_R=V_RM
V_R=V_RM, T_j=150°C
Between Junction and case
040909
1／4
61426-01