FMET-22010 Datasheet, PDF (1/6 Pages) Sanken electric – Trench Schottky Diode

V_RSM = 100 V, I_F(AV) = 20 A
Trench Schottky Diode
FMET-22010
Features
FMET-22010 is 100 V / 20 A Schottky Diode of the
Trench structure and has the improved characteristics of
V_F and I_R. These characteristics realize the improving of
power supply efficiency, and the high frequency system.
● V_RM------------------------------------------------------ 100 V
● I_F(AV)--------------------------------------------------------20A
● V_F (125 °C, I_F = 5 A) --------------------------- 0.57 V typ.
Applications
The high speed switching applications as follows:
● DC-DC Converter
● Adapter
Package
TO220F-3L
(1)
Preliminary
(1)(2)(3)
(2)
(1) Anode
(2) Cathode
(3) Anode
(3)
Not to scale
Absolute Maximum Ratings
 Unless otherwise specified, T_j is 25 °C
Parameter
Peak Repetitive Reverse Voltage
Repetitive Reverse Voltage
Average Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
V_RSM
V_RM
I_F(AV)
I_FSM
T_j
T_stg
Rating
100
100
20
110
−40 to 150
−40 to 150
Unit
Notes
V
V
A
A
10 ms
Half sinewave, one shot
°C
°C
Electrical Characteristics
 Unless otherwise specified, T_j is 25 °C
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
I_F = 5 A
V_F
I_F = 10 A
−
0.67
−
V
−
0.81 0.85
V
Forward Voltage Drop
Under High Temperature
Hï½¥V_F
T_j = 125 °C, I_F = 5 A
T_j = 125 °C, I_F = 10 A
−
0.57
−
V
−
0.67
−
V
Reverse Leakage Current
Reverse Leakage Current
Under High Temperature
I_R
Hï½¥I_R
V_R = V_RM
V_R = V_RM, T_j = 150 °C
−
0.4
70
µA
−
4.0
35
mA
Thermal Resistance*
R_th(j-c)
−
−
4.0 °C/W
* R_th(j-c) is thermal resistance between junction and case. Case temperature (T_C) is measured at the under of the screw
hole of case.
FMET-22010-DSE Rev.0.2
SANKEN ELECTRIC CO.,LTD.
1
Apr. 12, 2016
http://www.sanken-ele.co.jp/en