FMEN-2308 Datasheet, PDF (1/4 Pages) Sanken electric – Silicon Schottky Barrier Diode

SANKEN ELECTRIC CO., LTD.
１ Scope
The present specifications shall apply to an FMEN-2308.
２ Outline
Type
Silicon Schottky Barrier Diode
Structure
Resin Molded
Applications
High Frequency Rectification
FMEN-2308
３ Flammability
UL94V-0(Equivalent)
４ Absolute maximum ratings
No.
Item
Symbol Unit
1 Transient Peak Reverse Voltage V_RSM V
2 Peak Reverse Voltage
V_RM
V
3 Average Forward Current
I_F(AV)
A
4 Peak Surge Forward Current
5 I²t Limiting Value
I_FSM
A
I²t
A²s
6 Junction Temperature
T_j
°C
7 Storage Temperature
T_stg
°C
No.1,2,4&5 show ratings per one chip.
Rating
85
80
30
150
112.5
Conditions
PT ≤ 500 ns
Duty ≤ 1/40 *1
Refer to derating curve
in Section 7
10 ms.
Half sine wave, one shot
1 ms ≤ t ≤ 10 ms
-40 to +150
-40 to +150
※1 _VRSM
V_RM
５ Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Item
Symbol Unit
Value
1 Forward Voltage Drop
V_F
V
2 Reverse Leakage Current
I_R
µA
3
Reverse Leakage Current Under
High Temperature
Hï½¥I_R
mA
4 Thermal Resistance
R_th(j-c) °C/W
No.1,2&3 show characteristics per one chip.
0.765 max.
300 max.
150 max.
4.0 max.
071227
PT
T
Conditions
I_F=15A
V_R=V_RM
V_R=V_RM, T_j=150°C
Between Junction and case
1／4
61426-01