FMDA-10565 Datasheet, PDF (1/5 Pages) Sanken electric – SiC Schottky Diode

V_RSM = 650 V, I_F(AV) = 5 A
SiC Schottky Diode
FMDA-10565
Features
FMDA-10565 is a SiC Schottky Diode of 650 V / 5 A
and has the characteristics of low reverse leakage current
at high temperature and high speed switching.
These characteristics realize the improving of power
supply efficiency, and the high frequency system.
● V_RSM ---------------------------------------------------- 650 V
● I_F(AV)-------------------------------------------------------- 5 A
● V_F (25 °C)----------------------------------------------- 1.5 V
Applications
The high speed switching applications as follows:
● PFC circuit
● Motor drive circuit
● Inverter circuit
AnodeDiodeage
TO220F-2L
(1) (2)
(1) Cathode
(2) Anode
Not to scale
Absolute Maximum Ratings
 Unless otherwise specified, T_A is 25 °C
Parameter
Peak Repetitive Reverse Voltage
Repetitive Reverse Voltage
Average Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
V_RSM
V_RM
I_F(AV)
I_FSM
T_j
T_stg
Rating
650
600
5
25
−40 to 175
−40 to 175
Electrical Characteristics
 Unless otherwise specified, T_A is 25 °C
Parameter
Symbol
Test Conditions
Forward Voltage Drop
T_A = 25 °C, I_F = 5 A
V_F
T_A = 100 °C, I_F = 5A
Reverse Leakage Current
Reverse Leakage Current
Under High Temperature
I_R
Hï½¥I_R
V_R = V_RM
V_R = V_RM, T_j = 150 °C
Thermal Resistance*
R_th(j-L)
* R_th(j-L) is thermal resistance between junction and lead.
Unit
Notes
V
V
A
A
10 ms
Half sinewave, one shot
°C
°C
Min. Typ. Max. Unit
−
1.5 1.75
V
−
1.6
−
V
−
15
100
µA
−
7 0 TBD µA
−
−
2.5 °C/W
FMDA-10565-DSJ Rev.1.0
SANKEN ELECTRIC CO.,LTD.
1
Jan. 06, 2016
http://www.sanken-ele.co.jp