FMB-G14L Datasheet, PDF (1/4 Pages) Sanken electric – Silicon Schottky Barrier Diode

SANKEN ELECTRIC CO., LTD.
FMB-G14L
1. Scope
The present specifications shall apply to an FMB-G14L.
2. Outline
High Frequency Rectification
Type
Silicon Schottky Barrier Diode
Structure
Resin Molded Flammability : UL94V-0 (Equivalent)
Applications
High Frequency Rectification
3. Absolute maximum ratings
No.
Item
1 Transient Peak Reverse Voltage
2 Peak Reverse Voltage
3 Average Forward Current
4 Peak Surge Forward Current
5 I²t Limiting Value
6 Junction Temperature
7 Storage Temperature
4. Electrical characteristics
No.
Item
1 Forward Voltage Drop
2 Reverse Leakage Current
Symbol Unit
V_RSM
V
V_RM
V
I_F(AV)
A
I_FSM
A
I²t
A²s
T_j
°C
T_stg
°C
Symbol Unit
V_F
V
I_R
mA
Rating
45
40
5.0
60
18
-40 +150
-40 +150
Conditions
Refer Derating of 6
half sinewave, one shot
1msec≤ t≤ 10msec
Value
0.55 max.
5.0 max.
Conditions
I_F=5.0A
V_R=V_RM
H I_R1 mA
3
Reverse Leakage Current Under
High Temperature
H I_R2 mA
4 Thermal Resistance
R_th(j-c) °C/W
50 max.
175 max.
4.0 max.
V_R=V_RM, T_j=125°C
V_R=V_RM, T_j=150°C
Between Junction and case
040130
1／4
61426-01