DKI06075_15 Datasheet, PDF (1/8 Pages) Sanken electric – N ch Trench Power MOSFET

60 V, 48 A, 5.3 mΩ Low RDS(ON)
N ch Trench Power MOSFET
DKI06075
Features
 V_(BR)DSS --------------------------------- 60 V (I_D = 100 µA)
 I_D ---------------------------------------------------------- 48 A
 R_DS(ON) ------------ 7.0 mΩ max. (V_GS = 10 V, I_D = 34 A)
 Q_g-------- 26.9 nC (V_GS = 4.5 V, V_DS = 30 V, I_D = 39 A)
 Low Total Gate Charge
 High Speed Switching
 Low On-Resistance
 Capable of 4.5 V Gate Drive
 100 % UIL Tested
 RoHS Compliant
Package
TO-252
(4)
D
(1) (2) (3)
GDS
(3) (2) (1)
SDG
Applications
 DC-DC converters
 Synchronous Rectification
 Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
 Unless otherwise specified, T_A = 25 °C
Parameter
Symbol
Test conditions
Rating
Unit
Drain to Source Voltage
V_DS
Gate to Source Voltage
V_GS
60
V
± 20
V
Continuous Drain Current
I_D
T_C = 25 °C
48
A
Pulsed Drain Current
I_DM
PW ≤ 100µs
Duty cycle ≤ 1 %
96
A
Continuous Source Current
(Body Diode)
I_S
48
A
Pulsed Source Current
(Body Diode)
I_SM
PW ≤ 100µs
Duty cycle ≤ 1 %
96
A
V_DD = 30 V, L = 1 mH,
Single Pulse Avalanche Energy
E_AS
I_AS = 11.2 A, unclamped,
R_G = 4.7 Ω
126
mJ
Refer to Figure 1
Avalanche Current
I_AS
23.3
A
Power Dissipation
P_D
T_C = 25 °C
61
W
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
150
°C
− 55 to 150
°C
DKI06075-DS Rev.1.5
SANKEN ELECTRIC CO.,LTD.
1
Mar. 11, 2015
http://www.sanken-ele.co.jp